Chemical vapor deposition of TiO2 thin films from a new halogen-free precursor

Abstract

TiO2 films are synthesized by chemical vapor deposition using the recently synthesized precursor Ti(H3BNMe2BH3)2 with H2O as the co-reactant. Films grown between 350 and 450 °C are crystalline and consist of a mixture of rutile and anatase phases; the fraction of rutile/anatase is larger at 450 °C. The films are continuous, dense, and pure, with the sum of B, C, and N impurities <1 at. %. The growth rate is ∼1.2 nm/min, limited by the precursor feed rate and therefore independent of temperature. The growth rate decreases monotonically with increasing H2O pressure due to the competition between precursor and co-reactant molecules for adsorption sites on the surface. The advantages of this system compared with other available Ti-bearing precursors are the absence of halogen and the synthesis of mixed-phase material at modest temperatures.

Enhanced adsorption capacity of porous titanium dioxide nanoparticles synthetized in alkaline sol

“…It has a compact crystalline structure and exists in three phases: anatase, rutile and brookite. It can be synthesized by several chemical [25][26][27][28] and physical [29,30] techniques in the form of nanoparticles (NPs) [31,32] and thin films [33][34][35]. At low calcination temperatures (T C < 400 °C), it is amorphous and exhibits a porous structure but, to our best knowledge, there are no many studies that take into consideration this property for environment applications.…”

Dioxo–Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition

“…For example, the growth rate of the film grown at 200 °C in the presence of water was 1.2 ± 0.3 Å/min compared to 4.7 ± 0.4 Å/min under single-source conditions (Table S8 in the Supporting Information). These observations are consistent with reports that the rate for TiO 2 film growth via CVD decreases as water vapor pressure increases because of competition between precursor and coreactant for reaction sites …”

Synthesis of anodic TiO 2 nanotubes on indium tin oxide coated glass electrodes

“…Both TiO 2 and ITO films have been fabricated by various methods, such as chemical vapor deposition, sol-gel, evaporation, sputtering, etc. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][26][27][28][33][34][35][36] As a method of deposition, magnetron sputtering is the most attractive process in terms of industrial productivity due to its potential for homogeneous large-area coating, good reproducibility, and high deposition rate. This method can be used to deposit coatings with superior mechanical resistance compared with, for example, sol-gel coatings.…”

“…Both TiO 2 and ITO films have been fabricated by various methods, such as chemical vapor deposition, sol‐gel, evaporation, sputtering, etc 10‐24,26‐28,33‐36 . As a method of deposition, magnetron sputtering is the most attractive process in terms of industrial productivity due to its potential for homogeneous large‐area coating, good reproducibility, and high deposition rate.…”