Chemical vapor deposition precursor chemistry. 2. Formation of pure aluminum, alumina, and aluminum boride thin films from boron-containing precursor compounds by chemical vapor deposition

Chemical vapor deposition of metal borides: 6. The formation of neodymium boride thin film materials from polyhedral boron clusters and metal halides by chemical vapor deposition

“…In our previous investigations, we demonstrated the deposition of very high quality crystalline solid-state thin films of several metal borides by chemical vapor deposition through the vacuum copyrolysis of gas phase borane hydride clusters and metal halide vapor. [1,20,21,25] These deposition processes were found to occur at significantly lower temperatures, about 800…”

“…[14,19 -21] When hydridometalborohydride complexes are used instead, such as AlH 2 (BH 4 ) 3 ·2N(CH 3 ) 3 , very clean depositions of pure metal result. [20,21] The application of these precursors, however, is often severely limited by both the instability/reactivity and the synthetic difficulties encountered in the preparation of the metal borohydride complexes. In particular, lanthanaborohydride complexes are relatively rare, and those that are known are insoluble, nonvolatile solids, rendering them inappropriate for CVD methods.…”

Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent

“…CVD of high purity, low resistivity Al films has been achieved using a variety of Al precursors, ,,− but the miniaturization demands of Moore’s Law are not completely satisfied by CVD in terms of uniformity and conformality. ALD is uniquely suited to deposit uniform films with Angstrom-level thickness control due to its self-limiting growth mechanism. − There have been two reports of the plasma-enhanced ALD (PE-ALD) of Al metal films using AlMe 3 and H 2 plasma. , PE-ALD has been used to deposit many materials that remain challenging for thermal ALD, but step coverage may be limited by rapid hydrogen atom recombination in high aspect ratio features and substrate damage may occur from energetic plasma species …”

Comparative Study of the Metal Organic Chemical Vapor Deposition of β-CoGa Thin Films from Dialkylgallium Tetracarbonylcobaltate Single-Source Precursors

“…involves the formation of (β-diketonato) 2 Cu II in the course of a ligand migration at the copper surface . Another type of rearrangement is important for the deposition of pure aluminum films from the precursor (Me 3 N)Al(H) 2 (μ 2 -BH 4 ) reported by Spencer et al The transfer of the amine ligand from the aluminum to the boron center leads to the liberation of thermally stable H 3 B−NMe 3 . A similar reaction chemistry was observed during MOCVD of FeGa and FeAl thin films from (η 5 -C 5 H 5 )(CO) 2 Fe−E[(CH 2 ) 3 NMe 2 ](η 2 -BH 4 ) (E = Al, Ga). , The alkylborane H 2 B[(CH 2 ) 3 NMe 3 ] was identified in the effluent.…”