Chemical vapour transport of molybdenum and tungsten diselenides by various transport agents

Legma, Jean B.; Vacquier, G.; Casalot, A.

doi:10.1016/0022-0248(93)90859-u

Cited by 40 publications

(49 citation statements)

References 23 publications

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“…From this point of view, source materials and the mineralizer can be regarded as the most decisive factors in the growth of TMD crystals. Thereafter, the reaction conditions could be optimized case by case, typically in an empirical way, and some representative reactions are summarized in Table 1 …”

Section: Cvt Based Synthesis Of 2d Transition Metal Dichalcogenidesmentioning

confidence: 99%

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

Wang

Luo

Lü

et al. 2019

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semimetals (Si and Ge) to transition metal dichalcogenides (TMDs), which can be tuned from semiconductors to superconductors, have been intensively investigated. [8] Despite the recent advances in 2D materials, it is still challenging to obtain 2D materials with desired layers and size in facile and controllable manners.Indeed, continuous research has been carried out on the synthesis of 2D materials. [9] Generally, two synthetic strategies, known as top-down and bottom-up, are applied to obtain 2D materials. In the common top-down strategy, 2D materials are exfoliated from their bulk counterparts. Differently, using the bottom-up strategy, 2D materials with a few thin layers, even an atomically thin layer, can be directly synthesized from small building blocks such as molecules and atoms. [10] In these synthetic strategies for 2D materials, chemical vapor transport (CVT) reaction, an old yet powerful technology, plays an important role because CVT reactions can be used for both topdown and bottom-up syntheses of 2D materials. [11] CVT reactions represent a category of reactions with one common feature: a condensed phase, typically a solid, sublimes in the presence of a gaseous reactant (the mineralizer), and then deposits elsewhere usually in the form of crystals. [12] Notably, CVT is different from chemical vapor deposition (CVD), another chemical vapor-based approach for synthesizing 2D materials. Specifically, the main difference between CVT and CVD lies in the source materials for synthesizing products, where solid reactants are typically used in CVT and gaseous precursors are usually applied in CVD. The difference induces consequent differences in reactor design, operational control, and product features, thus bringing strengths and drawbacks for each approach. Since the discovery of CVT reaction by Bunsen in 1851, comprehensive understanding of CVT reactions in both experimental exploration and theoretical modeling has been established. [13] Furthermore, thousands of CVT reactions have been applied till now, producing a great variety of pure and crystalline solids, including metals, metalloids, intermetallic phases, metal oxides, halides, chalcogen halides, chalcogenides, and pnictides. [13,14] The knowledge about CVT reactions, together with the large number of applicable reactions, can offer opportunities for the controllable synthesis of 2D materials and the exploration of new 2D materials. Unfortunately, for the preparation of 2D materials, in stark contrast to the wide application of CVD, 2D materials, namely thin layers of layered materials, are attracting much attention because of their unique electronic, optical, thermal, and catalytic properties for wide applications. To advance both the fundamental studies and further practical applications, the scalable and controlled synthesis of large-sized 2D materials is desired, while there still lacks ideal approaches. Alternatively, the chemical vapor transport reaction is an old but powerful technique, and is recently adopted for synthesizing 2D material...

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Section: Cvt Based Synthesis Of 2d Transition Metal Dichalcogenidesmentioning

confidence: 99%

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

Wang

Luo

Lü

et al. 2019

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“…Single crystals of tungsten diselenide have been grown by many workers [11][12][13] using different kinds of transporting agents. The growth parameters selected in the present investigation were different from those used by other workers [11].…”

Section: Methodsmentioning

confidence: 99%

Positive magnetoresistance in Ti_xW_1‐xSe₂ (x = 0, 0.03) platelet crystals

Kunjachan¹

2006

Cryst. Res. Technol.

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Layered transition metal dichalcogenide crystal, WSe 2 , has been grown by direct vapour transport technique. Titanium is used as a dopant in to the 2H type MX 2 matrix. These crystals show positive magnetoresistance and a switching behaviour is observed at room temperature in the titanium-intercalated sample. The relative resistance change due to magnetic field for the doped sample is found to switch from 23.6% to 39.6% when the sample is rotated through 0° to 90°.

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“…Les mesures ont ete effectukes dans une cellule electrochimique a trois electrodes placCe dans une cage de Faraday A l'abri de la lumiere. L'electrode de travail est un cristal clivC de diseleniure de transition, pur [7] ou dope au niobium [lo], prepare selon une mkthode decrite par ailleurs [7,161. Un contact arriere a etk obtenu en collant a la laque d'argent un fil de nickel.…”

Section: Mkthodes Exphimentalesunclassified

“…Afin d'obtenir une optimisation du rendement optique de la photoconversion, il s'est ainsi avere ntcessaire de developper des monocristaux de taille la plus grande possible, la mkthode de croissance cristalline de choix consistant a faire appel au transport en phase vapeur (T.P.V.) [5,6], l'agent de transport etant le selenium lui-m&me, un halogene (Br2, I,) ou un tetrachlorure de chalcogene (SeCl,, TeC1,) [7].…”

Section: Introductionunclassified

Détermination du potentiel de bande plate et du nombre de porteurs dans les diséléniures MoSe2 et Wse2

Legma¹,

Allais²,

Vacquier³

et al. 1992

Phys. Stat. Sol. (a)

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Des mesures d'impédance à la fréquence de 100 kHz ont été entreprises dans une cellule électrochimique à trois électrodes sur des monocristaux de dichalcogénures Tse2(T = Mo, W), dopés ou non par un autre métal M, dans le but d'étvaluer I'influence éventuelle de la nature du métal T, de celle de l'agent de transport ayant servi à la croissance cristalline et de la concentration en impuretés métalliques M de la solution‐mère. Le nombre de porteurs majoritaires évalué, soit à partir des pentes des droites de Mott‐Schottky, soit par mesures d'effet Hall, varie à la fois selon le taux de dopage (de 1019 à 1024 m−3) et selon la nature de l'agent de transport (entre 1022 et 1024 m−3). Si les potentiels de bande plate, calculés par extrapolation des courbes de Mott‐Schottky, s'avèrent, en milieu Na2SO4, conformes à ceux de la littèrature, ils subissent de très fortes variations en milieu I 3−/I−, puisqu'ils s'ètendent entre – 200 et – 800 mV/ECAS.

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Chemical vapour transport of molybdenum and tungsten diselenides by various transport agents

Cited by 40 publications

References 23 publications

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

Positive magnetoresistance in Ti_xW_1‐xSe₂ (x = 0, 0.03) platelet crystals

Détermination du potentiel de bande plate et du nombre de porteurs dans les diséléniures MoSe2 et Wse2

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Chemical vapour transport of molybdenum and tungsten diselenides by various transport agents

Cited by 40 publications

References 23 publications

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

Positive magnetoresistance in TixW1‐xSe2 (x = 0, 0.03) platelet crystals

Détermination du potentiel de bande plate et du nombre de porteurs dans les diséléniures MoSe2 et Wse2

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Positive magnetoresistance in Ti_xW_1‐xSe₂ (x = 0, 0.03) platelet crystals