2001
DOI: 10.1557/proc-705-y1.3
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Chemically Amplified Resist Approaches for E-beam Lithography Mask Fabrication

Abstract: This paper describes stable, high sensitivity (5-10 μC/cm2 at 50 kV) e-beam resist systems utilizing chemical amplification suitable for mask fabrication for device generations below 100 nm. In particular, two resist systems with improved performance for mask fabrication developed in a joint program by Etec, IBM and Shipley will be described: a Si- doped version of the IBM KRS-XE resist (now commercially available) developed at IBM Research, and a new MANA resist developed at Shipley. Commercialization issues … Show more

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“…[67] Chemically amplified resists for e-beam lithography have attracted much attention and appear to be the future direction in this field due to reasons described above. [67][68][69][70][71][72] One example of the chemically amplified e-beam resists is the KRS series recently developed by IBM. [67][68][69] A low activation energy ketal protecting group was incorporated to address the PED stability that has been encountered in many chemically amplified resist systems, which allows the deprotection reaction to occur in situ during exposure under vacuum so that the system is insensitive to airborne contamination.…”
Section: Chemically Amplified E-beam Resistsmentioning
confidence: 99%
“…[67] Chemically amplified resists for e-beam lithography have attracted much attention and appear to be the future direction in this field due to reasons described above. [67][68][69][70][71][72] One example of the chemically amplified e-beam resists is the KRS series recently developed by IBM. [67][68][69] A low activation energy ketal protecting group was incorporated to address the PED stability that has been encountered in many chemically amplified resist systems, which allows the deprotection reaction to occur in situ during exposure under vacuum so that the system is insensitive to airborne contamination.…”
Section: Chemically Amplified E-beam Resistsmentioning
confidence: 99%