Chemically deposited Cu2O thin film as an oxygen pressure sensor

Ristov, M.; Sinadinovski, Gj.; Mitreski, M.

doi:10.1016/0040-6090(88)90508-1

Cited by 24 publications

(10 citation statements)

References 5 publications

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“…Cu 2 O is p-type which has a direct optical band gap of 2 eV. Cuprous oxide, red copper oxide (Cu 2 O), a non-toxic material, is potentially attractive as an active solar cell material, selective absorber layer and used in oxygen or humidity sensors (Olsen et al 1983;Rai 1988;Ristov et al 1988). Many workers have carried out the deposition of copper oxide (Ristov et al 1985;Tolstoi and Molotilkina 1994;Nair et al 1999) using SILAR method.…”

Section: Metal Oxide Thin Filmsmentioning

confidence: 99%

Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

2004

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During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc. In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.

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Section: Metal Oxide Thin Filmsmentioning

confidence: 99%

Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

2004

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“…However, most of the studies reported to date have been focused on the optical and electrical properties of Cu 2 O thin films [1,2,3,4], and little attention has been devoted to the mechanical properties of Cu 2 O films. Since the rapid development of the field of nanotechnology over the last decade, there has been an increasing demand for handling materials at nanoscale for making nanostructures and/or nano-devices.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Properties of Cu2O Thin Films by Nanoindentation

2013

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In this study, the structural and nanomechanical properties of Cu2O thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and nanoindentation techniques. The Cu2O thin films are deposited on the glass substrates with the various growth temperatures of 150, 250 and 350 °C by using radio frequency magnetron sputtering. The XRD results show that Cu2O thin films are predominant (111)-oriented, indicating a well ordered microstructure. In addition, the hardness and Young’s modulus of Cu2O thin films are measured by using a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. Results indicated that the hardness and Young’s modulus of Cu2O thin films decreased as the growth temperature increased from 150 to 350 °C. Furthermore, the relationship between the hardness and films grain size appears to closely follow the Hall-Petch equation.

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“…1 It is a potentially attractive material for solar, sensor, and superconductor applications. [2][3][4][5][6] The preparation, characteristics, and photovoltaic properties of Cu 2 O have comprehensively been reviewed by Rakhshani. 7 There are several Cu 2 O film deposition methods, including thermal oxidation, 2,8 electrodeposition, 9 anodic 10 and chemical oxidations, 11 reactive sputtering, 12 and chemical deposition.…”

Section: Introductionmentioning

confidence: 99%

Novel Spray‐Pyrolysis Deposition of Cuprous Oxide Thin Films

Kosugi

Kasahara

1998

Journal of the American Ceramic Society

125

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Spray pyrolysis of aqueous solutions that include copper(II) acetate, glucose, and 2-propanol was studied for the formation of cuprous oxide (Cu 2 O) thin films on glass substrates. The deposition conditions, based on the phase relations of the films, were investigated in terms of solution concentration and substrate temperature. Also, the formation process was kinetically discussed. The Cu 2 O thin film obtained here was composed of rounded grains ∼50 nm in size with a surface roughness of ∼30 nm. This film was reddish yellow and showed indirect and direct bandgap energies of 1.95 and 2.60 eV, respectively. Furthermore, the film exhibited p-type conduction, with a resistivity of ∼100 ⍀ؒcm.

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Chemically deposited Cu2O thin film as an oxygen pressure sensor

Cited by 24 publications

References 5 publications

Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

Mechanical Properties of Cu2O Thin Films by Nanoindentation

Novel Spray‐Pyrolysis Deposition of Cuprous Oxide Thin Films

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