2016
DOI: 10.1016/j.solener.2016.09.046
|View full text |Cite
|
Sign up to set email alerts
|

Chemically deposited cubic SnS thin films for solar cell applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
23
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
6
1
1

Relationship

0
8

Authors

Journals

citations
Cited by 82 publications
(23 citation statements)
references
References 26 publications
0
23
0
Order By: Relevance
“…Other relevant applications in solar cell devices have been extensively studied . SnS is amphoteric and can be used as an absorber layer in solar cells, and its optical absorption coefficient is α > 104 cm −1 . Moreover, SnS has a narrow direct optical band gap of 1.3 eV, near the optimum gap for photovoltaic solar energy conversion .…”
Section: Introductionmentioning
confidence: 99%
“…Other relevant applications in solar cell devices have been extensively studied . SnS is amphoteric and can be used as an absorber layer in solar cells, and its optical absorption coefficient is α > 104 cm −1 . Moreover, SnS has a narrow direct optical band gap of 1.3 eV, near the optimum gap for photovoltaic solar energy conversion .…”
Section: Introductionmentioning
confidence: 99%
“…1. It was observed that at lower temperature (280ºC and 320ºC) the band gap was higher (1.8 eV and 1.78 eV) than generally reported 1.6 -1.75 eV for SnS film [10,11]. In addition, at higher temperature (440ºC) again high band gap (1.85 eV) was observed.…”
Section: Effect Of Substrate Temperaturementioning
confidence: 59%
“…The concentration of the complexing agent similarly influences the morphological and optical properties of the o-SnS, c-SnS, and SnS 2 films. The direct optical energy gap for o-SnS films reduces with increasing complexing agent concentration (TSC, 0.06–0.08 M; TEA, 12.5–13 M; TTA, 0.6–1.4 M) from 2.16 eV to 1.17 eV [ 50 , 182 , 214 ], but rises from 1.67 eV to 1.73 eV [ 26 ] for c-SnS films with EDTA (0.075–0.125 M) ( Figure 7 l). The change in complexing agent concentration (TSC, TTA) improves the compactness and morphology of o-SnS films ( Figure 7 m).…”
Section: Influence Of Deposition Parameters On Sn X S Y Thin Film Growth and Propertiesmentioning
confidence: 99%