Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

Abstract

AgInS 2 thin films were obtained by the annealing of chemical bath deposited In 2 S 3-Ag 2 S layers at 400 • C in N 2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS 2 has been obtained. These films have an optical band gap, E g , of 1.86 eV and an electrical conductivity value of 1.2 × 10 −3 (cm) −1 .

Thin films of AgIn5(S/Se)8 prepared in a two stage process

“…AgIn 5 S 8 has been obtained by different techniques such as thermal evaporation in one stage using AgIn 5 S 8 single crystals as a source material [1], or two stages using thermal evaporation of precursor metals and sulfurization [7], microwave hydrothermal synthesis [8], pulsed laser deposition [9], growth solution techniques as chemical deposition [10,11], one-pot synthesis [12] and low-temperature water bath deposition process to obtain AgIn 5 S 8 nanocomposite [13]. AgIn 5 Se 8 has been synthetized from the elementary components at 1200 K in a quartz evacuated ampoule and subsequently annealed at 820 K for 300 h [14].…”

“…Compositional, optical and electrical properties of such thin films are also analyzed in this work. In 2 S 3 thin films were obtained by CBD following the method previously reported by Lugo et al [13] but changing the indium source. Reaction solution in this work was carried out using the following chemical reagents in the order described here: 10 mL of InCl 3 0.1 M, 2 mL of CH 3 COOH 0.1 M, 16 mL of CH 3 CSNH 2 1 M, and water to complete a volume of 100 mL.…”