Chemically deposited PbSe thin films: factors deterring reproducibility in the early stages of growth

Templeman, Tzvi; Biton, Moshiel; Safrani, Tsofnat; Shandalov, Michael; Yahel, Eyal; Golan, Yuval

doi:10.1039/c4ce01371a

Cited by 35 publications

(21 citation statements)

References 22 publications

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“…Chemical bath deposition (CBD) from solution offers a simple and cost-effective route for the fabrication of high quality nanometer-sized semiconductor thin lms, without the need for high deposition temperatures and stringent vacuum or plasma generators compared to other sophisticated techniques. [1][2][3][4][5][6][7][8] The basic concept of this technique is the reaction of charged species in an aqueous environment onto a substrate in the presence of a complexing agent which prevents rapid precipitation. Two typical mechanisms through which reactions take place are known as ion-by-ion (IBI) and cluster growth methods.…”

Section: Introductionmentioning

confidence: 99%

“…At high pH, enhanced chalcogenide precursor decomposition leads to higher concentration of anions, while at the same time, complexation of metal cations by the hydroxide ions leads to lesser availability of cations. 1,5,6 Therefore, for a given system an increase in growth rate with increasing hydroxide concentration is expected up to a certain value aer which this effect will reverse.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced SWIR absorption in chemical bath deposited PbS thin films alloyed with thorium and oxygen

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced SWIR absorption in chemical bath deposited PbS thin films alloyed with thorium and oxygen

et al. 2016

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“…17 We adopt a standalone passivation scheme, that differs from previous preparation strategies. 18 While it keeps the morphology of the NPs unchanged, the chemical and structural analyses of the heterostructure reveal the formation of an atomically sharp interface. More importantly, this step is found to suppress charging effects in scanning tunnelling microscopy (STM) and spectroscopy (STS) of single NPs, making the NPs electronically transparent to tunnelling electrons for the energy window corresponding to the band gap of the NPs.…”

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confidence: 99%

Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy

et al. 2019

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Semiconductor nanocrystalline heterostructures can be produced by the immersion of semiconductor substrates into an aqueous precursor solution, but this approach usually leads to a high density of interfacial traps. In this work, we study the effect of a chemical passivation of the substrate prior to the nanocrystalline growth. PbS nanoplatelets grown on sulfur-treated InP (001) surfaces at temperature as low as 95°C exhibit abrupt crystalline interfaces that allow a direct and reproducible electron transfer to the InP substrate through the nanometer-thick nanoplatelets with scanning tunnelling spectroscopy. It is in sharp contrast with the less defined interface and the hysteresis of the current-voltage characteristics found without the passivation step. Based on a tunnelling effect occuring at energies below the bandgap of PbS, we show the formation of a type II, trap-free, epitaxial heterointerface, with a quality comparable to that grown on a non-reactive InP (110) substrate by molecular beam epitaxy. Our scheme offers an attractive alternative to the fabrication of semiconductor heterostructures in the gas phase.

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“…[32] This method enables fabrication of high quality films at low cost and with no need for high temperatures or stringent vacuum systems. [52] Postgrowth thermal treatments were performed using a controlled atmosphere furnace. Film nanostructures were composed of nanocrystalline domains, comprised of spherical grains with an average size of ≈8 nm.…”

Section: Methodsmentioning

confidence: 99%

“…This treatment is required as untreated substrates result in diminished film adhesion and reduced film durability to high voltage, as reported also for the deposition of PbSe on GaAs(100) substrates. [52] Postgrowth thermal treatments were performed using a controlled atmosphere furnace. Identical samples were treated at different conditions; the controlled parameters of the treatment were the chemical environment (air or ultrahigh purity argon gas), temperature and duration as detailed below.…”

Section: Methodsmentioning

confidence: 99%

Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions

Maman

Templeman

Manis-Levi

et al. 2018

Adv Materials Inter

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widespread use in solar cells and microelectronic devices. [1][2][3][4][5] In solar cells, the incorporation of the thin insulating layer enables reduction of leakage currents leading to overall improved efficiency. Certain electronic components, such as MIS diodes, depend on the insulator properties, which, if tuned properly, will perform current multiplication, thus acting as electronic switches. [6,7] A common application of MIS and SIS junctions is in electromagnetic radiation detection, [1] where excited charge carriers, driven by the depletion layer's electric field, tunnel through a thin insulating layer. To date, MIS and SIS junctions were incorporated as electromagnetic radiation detectors for the ultraviolet (UV), visible, and infrared (IR) spectral regions, where the wavelength sensitivity is determined by the choice of metal (work function) and the semiconductor (bandgap) materials. As examples, UV MIS detectors were presented using Si/SiO 2 core-shell particles, [8] and visible blind IR detectors were constructed using multilayers of SiO 2 /TiO 2 in a MIS structure. [9] In order to push the detection limits into the short wavelength infrared (SWIR) spectral band (1.3-1.5 um), Yu et al. combined Ge based detectors with insulators using low temperature diffusion processing. [10] Other devices where amorphous insulating layers play an important role are thin film transistors. Amorphous oxides have many advantages including high optical transparency, high electron mobility, and homogeneous microstructure with no grain boundaries. [11] The device structure and material properties, e.g., metal work function, insulator thickness/composition, and semiconductor type/doping level, all play crucial roles in determining device electrical properties and efficiency.The most common insulating materials in such devices are oxides of the semiconductor layer. To form the oxide layer, the semiconductor surface is typically exposed and chemically reacted with either wet or dry oxygen at elevated temperatures prior to film deposition. Control over the thickness is achieved through reaction parameters, such as duration and temperature. [12] Tuning oxide thickness is crucial for device performance; too thin an oxide results in negligible barrier, while too thick results in complete insulation. Many theoretical studies attempted to pinpoint the exact role of the insulating layer, however, it appears that several mechanisms take place simultaneously, and different thickness regimes should be individually considered. [6,13] As an example, in an Al-SiO 2 -SiThe electronic properties of the heterojunction formed by chemical bath deposition of a thorium-and oxygen-doped PbS nanostructured layer on GaAs substrate as a function of postgrowth thermal treatments are studied. A correlation is found between the heterojunction conductance and the duration of thermal treatment in air. In contrast to previous reports on the effect of air annealing on PbS films, where the conductance increased due to oxygen incorporation within the PbS, i...

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Chemically deposited PbSe thin films: factors deterring reproducibility in the early stages of growth

Cited by 35 publications

References 22 publications

Enhanced SWIR absorption in chemical bath deposited PbS thin films alloyed with thorium and oxygen

Enhanced SWIR absorption in chemical bath deposited PbS thin films alloyed with thorium and oxygen

Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy

Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions

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