Chemically etched-mirror GaInAsP/InP lasers - Review

Iga, Kenichi; Miller, B. I.

doi:10.1109/jqe.1982.1071382

Cited by 30 publications

(5 citation statements)

References 43 publications

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“…In this paper, four typical anisotropic etching techniques for GaInAsP-InP have been investigated, i.e., Cl -based RIBE [62]- [64], methane CH -based RIBE [65], [66], selective wet chemical etching with hydrogen chrolide (HCl) solution [67]- [69] and anodic chemical etching [51], [70]. For Cl RIBE, ultrahigh vaccum system ANELVA UHV-ECR [63], [64] was used.…”

Section: Processing Of Microcavitiesmentioning

confidence: 99%

Photonic crystals and microdisk cavities based on GaInAsP-InP system

Baba

1997

IEEE J. Select. Topics Quantum Electron.

219

132

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Section: Processing Of Microcavitiesmentioning

confidence: 99%

Photonic crystals and microdisk cavities based on GaInAsP-InP system

Baba

1997

IEEE J. Select. Topics Quantum Electron.

219

132

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“…In these cases, the mask-substrate combination apparently inhibited the formation of the undersloping wall by favoring continuing undercutting. But here again, the reproducibility and planarity advantages of a stop etch plane are not being utilized, and the wall profile is rounded as in other such cases (13)(14)(15)(16)(17)(18)(19)(20).…”

Section: Galnasp/lnp Heterostructure Wall Profilesmentioning

confidence: 99%

“…Recently, there have been several important papers that addressed the topic of etching in GaInAsP/InP (13)(14)(15)(16), but still lacking are detailed procedures for obtaining a desired wall profile (such as vertical) or an understanding of how to proceed to develop such procedures for a new problem. Earlier work in GaA1As/GaAs went some distance in addressing these questions (17)(18)(19)(20) but much of the information is limited to that system.…”

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On the Formation of Planar‐Etched Facets in GaInAsP / InP Double Heterostructures

Coldren¹,

Furuya²,

Miller³

1983

J. Electrochem. Soc.

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Techniques to predict and control the etched wall profile at a mask edge are developed. An understanding of the etch rate vs. substrate orientation angle is used to predict and experimentally realize desired etched wall profiles on (001) normalGaInAsP/normalInP double heterostructure (DH) wafers. The identification and utilization of crystallographic stop etch planes is key to ensuring planar and reproducible etched facets. Fabrication procedures employing wet and dry etching techniques are outlined for either isolated step‐etched vertical wall profiles or narrow groves.

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“…14 To reduce this angle to zero the normal of the substrate has to be tilted relative to the impinging argon beam. 14 To reduce this angle to zero the normal of the substrate has to be tilted relative to the impinging argon beam.…”

Section: Etch Profilementioning

confidence: 99%

Low temperature chemically assisted ion-beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devices

Eisele

Daleiden

Ralston

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inHigh-temperature operation of an electroluminescent device fabricated using a novel triphenylamine derivative All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation A comparative study of Cl2 and HCl gases for the chemically assisted ion beam etching of InP Chemically assisted ion-beam etching processes have been examined using Cl 2 , CH 3 I, and IBr 3 for application in manufacturing optoelectronic devices. Although the etch rate was one of the properties compared, more attention was directed towards clean, smooth surfaces and exact reproduction of the desired geometry. The main effort was directed towards etching of laser mirrors, which require perpendicular sides of the structure with respect to the substrate plane. It was found that a low substrate temperature of 0 to 10°C is the key for obtaining the desired surface quality and that a perpendicular sidewall can only be obtained by tilting the semiconductor wafer. This is in contrast to GaAs where temperature and beam energy strongly determine the angle of the structure walls relative to the wafer plane.

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Chemically etched-mirror GaInAsP/InP lasers - Review

Cited by 30 publications

References 43 publications

Photonic crystals and microdisk cavities based on GaInAsP-InP system

Photonic crystals and microdisk cavities based on GaInAsP-InP system

On the Formation of Planar‐Etched Facets in GaInAsP / InP Double Heterostructures

Low temperature chemically assisted ion-beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devices

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