“…1 Among these, ZnO, a n-type semiconductor, is a promising material due to its non-toxicity, wide bandgap, ease of synthesis, doping, and high mobility. 2 Moreover, the bulk to hierarchical nanostructured morphologies of ZnO can be easily tuned with the help of a variety of physical and chemical techniques, including sputtering, evaporation, hydrothermal, spray pyrolysis, chemical bath deposition, reflux, and SILAR methods. [3][4][5][6][7] Out of these, the reflux method is one of the most favorable methods due to its properties to alter the morphology and thickness by controlling the deposition parameters like deposition time, temperature, pH of growth solution, and bath composition.…”