Chemically Tunable Textured Interfacial Defects in PbZrO₃-Based Antiferroelectric Perovskite Oxides

Abstract

Antiferroelectric perovskite oxides, which can undergo ultrafast charge/discharge with a large energy storage density, are among the most important functional materials for applications in pulsed power capacitors. Owing to the complex modulation of atomic displacement, a variety of interfacial defects have been observed within a single antiferroelectric domain. However, the intercorrelation between different interfacial defects is still less understood. Here, we report the finding of the evolution of interfacial defects by compositional design in PbZrO3-based ceramics, which can be tailored in the form of either antiphase boundaries or nanophase boundaries. We demonstrate that such an evolution is closely correlated with the degree of displacement ordering, which can be modified by chemical disorder in a sublattice and/or additional ferroelectric–antiferroelectric competition. There is an obvious difference in the local behavior of lattice spacing across antiphase boundaries and nanophase boundaries. Our study enriches the knowledge of modulated structures in perovskite oxides and offers a basis for defect engineering.

Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review

“…Corresponding to a larger coercive field and Pmax, the (110)C ori ented film delivers higher energy storage density (Jrec = 21.4 J/cm 3 ) than the other two (Jr ≈ 16 J/cm 3 ) [71]. From a microstructural perspective, one may expect that the type and density of structural defects [116][117][118][119] may influence the energy storage performance Through introducing local compressive pressure, Zhang et al reported that enhanced crit ical fields may increase the Jrec [53,67,120], e.g., from 9 to 16.2 J/cm 3 in Li + -La 3+ co-doped PbZrO3 films. By constructing a ferrielectric (FiE) M2-M3 phase boundary, Luo et al achieved an energy density of 6.3 J/cm 3 with η = 90% in (1-x)AgNbO3-xAgTaO3 solid so lution [46].…”

High polarization stability of Sr modified Pb(Zr,Sn)NbO3 antiferroelectric ceramics

“…It can be clearly observed that with the increase of Sr 2+ content, the interface defects change from neatly arranged stripes to densely scattered spots. From previous studies on interface defects 37 , such an evolution is closely correlated with the degree of A‐site displacement ordering. And the change of order degree is finally reflected in the switching field.…”

Translational Antiphase Boundaries in NaNbO3 Antiferroelectrics

“…That is, the compensated net zero polarization allows the stable presence of dense translational boundaries; otherwise, the system would have a very high polarization energy with a high density of polar translational boundaries . In comparison, such translational APBs exhibit polarity in PZ, ,, accounting for their lower density as seen in Figure S5. Moreover, the antipolarity of translational APBs may explain their inertial response to external stimuli as they may require a much higher threshold field to break the antiparallel configurations of the translational APB structure.…”