1989
DOI: 10.1002/chin.198913323
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ChemInform Abstract: Characterization of Silicon Nitride and Silicon Carbonitride Layers from 1,1,3,3,5,5‐Hexamethylcyclotrisilazane (I) Plasmas.

Abstract: It is found that the properties of silicon nitride (prepared from dilute (I)/NH3 plasmas) and carbonitride (dilute (I)/H2 plasmas) films critically depend on the ratio of RF power density to the (Me2Si‐NH)3 (I) flow rate, W/Fm.

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