Nickel germanide thin films were prepared using nickel−germanium multilayers as
reactive precursors. Over the composition range x
Ni = 0.24−0.42, high-temperature germanides (δ-Ni5Ge2, ε-Ni5Ge3, and Ni3Ge2) form under conditions where the phases are
thermodynamically unstable. δ-Ni5Ge2 forms over a broader range of composition than has
been observed previously. The three high-temperature phases accessible by this synthetic
route are observed to share related structure types, which are related to the structure of
amorphous nickel germanium alloys with similar composition. The ability to selectively
prepare metastable phases under mild conditions has important implications with respect
to the search for new materials for use in integrated devices.