Chemischer Informationsdienst
 1975
DOI: 10.1002/chin.197527049
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ChemInform Abstract: FORMATION OF SILICA FILMS ON SILICON USING SILANE AND CARBON DIOXIDE

W. Kroll1,
Russell L. Titus2,
Jeff Wagner3

Abstract: Die Reaktion von SiH4 mit CO2 zur Bildung von SiO2 auf Si wird zwischen 700 1100°C untersucht.

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