2000
DOI: 10.1002/chin.200003007
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ChemInform Abstract: High Proton Conductivity in Porous P2O5—SiO2 Glasses.

Abstract: High Proton Conductivity in Porous P 2 O 5 -SiO 2 Glasses.-Porous silica glasses containing 2 or 5 mol% P 2 O 5 are prepared by a sol-gel process starting with the hydrolysis of Si(OEt) 4 and PO(OMe) 3 . The electrical conductivity of the glasses is studied as a function of the pore structure and the amount of adsorbed water. The pore structure is controlled by addition of formamide during gel syntheses and the specific surface area is varied over the range 200-900 m 2 /g. Exposure to humid atmosphere results … Show more

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“…29,30 Doping silicate glasses with phosphorus sterically hinders the glass network to increase nonbridging oxygen bonds, 31 replaces Si−O−Si bonds with −Si−OH and −Si−O−P−OH groups, and increases both the pore volume and surface area. 32 The P−OH groups not only have higher acidity in comparison to silanol but are also amphoteric, meaning that they can act as both proton donors and acceptors. 33 These are all key properties that provide phosphosilicate glass (PSG, P-SiO 2 ) high proton conductivity at room temperature (2.54 × 10 −4 S cm −1 ), which stands among the highest values in comparison with several perovskite, fluorite, and simple oxide proton-conducting materials, 34 while retaining their electron-insulating properties.…”
Section: Device Operationmentioning
confidence: 99%
“…29,30 Doping silicate glasses with phosphorus sterically hinders the glass network to increase nonbridging oxygen bonds, 31 replaces Si−O−Si bonds with −Si−OH and −Si−O−P−OH groups, and increases both the pore volume and surface area. 32 The P−OH groups not only have higher acidity in comparison to silanol but are also amphoteric, meaning that they can act as both proton donors and acceptors. 33 These are all key properties that provide phosphosilicate glass (PSG, P-SiO 2 ) high proton conductivity at room temperature (2.54 × 10 −4 S cm −1 ), which stands among the highest values in comparison with several perovskite, fluorite, and simple oxide proton-conducting materials, 34 while retaining their electron-insulating properties.…”
Section: Device Operationmentioning
confidence: 99%
“…However, SiO 2 with porous structure may be easier for metal ions diffusion and filament deposition to reduce the switching voltage. Porous SiO 2 films are usually prepared through chemical method, like sol‐gel processing [6, 7]. As an alternative, more uniform porous SiO 2 ‐based glass electrolyte films can be deposited by plasma enhanced chemical vapour deposition (PECVD) process at low temperature [8].…”
Section: Introductionmentioning
confidence: 99%