ChemInform Abstract: Iron‐Catalyzed C—H Activation

Abstract

Review: 83 refs.

Comparison Study between Surface Bending and Base Bending in the Bending Strength and the Microstructure Variation for FSWed ZM6 Sheet

“…This is mainly related to the microstructure of surface bending sample and base bending sample. [ 27 ] Therefore, in order to comprehend the different microstructure and texture evolution of the friction stir‐welded sheets after surface and base bending, a series of positions on the cross section of SZ are chosen for EBSD analysis, as indicated by squares in Figure 4. These regions correspond to the SZ‐AS of surface bending, the SZ‐C of surface bending, the SZ‐AS of base bending, and the SZ‐C of base bending.…”

Improving Quality of Material by Reducing Its Interaction with Fused Silica Container During Processing

“…Then, both growth runs were processed by unseeded directional solidification as described in refs. [18, 19] Briefly, the ampoules were cleaned and baked at 1080 °C under vacuum for 16 h. About 49 g of high purity (99.9999%) Pb and Te elemental chunks with 0.28 g of PbCl 2 (99.999%), provided by Alfa Aesar, were loaded and sealed inside fused silica ampoules and homogenized inside a tubular rocking furnace for the melting and mixing of the charges. The ampoules were opened and the homogenized ingots were retrieved and loaded inside the fused silica growth ampoules, which had been prepared by HF etching at room temperature, 45 s for PT‐24 and 30 min for PT‐25 growth ampoule, and then baked under vacuum at 1080 °C for 16 h. The melt growths by directional solidification were processed vertically inside resistance‐heated tubular furnaces with the ampoules at the temperature range of 870–970 °C for about 20 h. The furnace was cooled down by turning off the power to the furnace.…”

“…However, as shown on the top row of Figure , each sample discs cut from PT‐24 ingot, the growth without 30 min HF etching, disintegrated into 4 to 5 pieces whereas the discs from PT‐25 ingot, the growth ampoule with 30 min HF etching, remained as solid pieces, as shown on the bottom row in Figure 5, and were successfully tested with various thermoelectric characterizations from room temperature to 650 °C. [ 18,19 ]…”

Synthesis and Electronic Characterization of Weyl Semimetal TaSb2Polycrystalline Material

“…The performance of thermoelectric materials is evaluated using a power factor, P , and the nondimensional figure of merit, ZT , which are expressed by the following equations. where S represents the Seebeck coefficient, ρ represents the electrical resistivity, and κ represents the thermal conductivity. Bi 2 Te 3 , [ 1–3 ] PbTe, [ 4 ] and SiGe [ 5–7 ] are representative examples of thermoelectric conversion materials for practical use. In particular, Bi 2 Te 3 is used for thermoelectric power generation and cooling units of laser diodes, and its ZT is ≈1.2–1.4.…”