1983
DOI: 10.1002/chin.198328004
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ChemInform Abstract: LATTICE PARAMETER CHANGES IN ALUMINUM GALLIUM ARSENIDE (AL0.39GA0.61AS) DUE TO OXYGEN, GERMANIUM, SILICON, AND SULFUR DOPING

Abstract: Sowohl das Auftreten von O2 in der Wachstumsumgebung als auch von Ge in den Wachstumslösungen weiten das Gitter epitaktisch abgeschiedener A1039 Gao ,6, As‐ Filme auf.

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