ChemInform Abstract: Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma‐Enhanced Chemical Vapor Deposition.

Abstract

Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition.-A new type of microwave excitation, the distributed electron cyclotron resonance, is used for the deposition of SiO2 thin films from N2O/SiH4 gas mixtures at low substrate temp. (¡ 120 • C). The atomic composition of the films is found to depend on the gas phase composition. The nearly stoichiometric films obtained with an optimized N2O to SiH4 flow ratio of R = 9 have electrical properties comparable with those of films prepared by conventional deposition techniques at significantly higher temp. (¿ 250 • C). It is suggested that the optimization of other deposition parameters may further improve the quality of these low-temp. films. -(PLAIS, F.; AGIUS, B.; ABEL, F.; SIEJKA, J.; PUECH, M.; RAVEL, G.; ALNOT, P.; PROUST, N.; J.

Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma‐Enhanced Chemical Vapor Deposition

“…At this time, only microwave PECVD allows low temperature deposition of high quality dielectric thin films (6,8,11). This is due to the high reactivity of microwave plasma at electron cyclotron resonance (ECR) conditions.…”

“…The deposition of high electrical quality films at low temperature remains an open challenge. In this paper, we present and discuss the silicon dioxide deposition process at low temperature (T~ < 120~ by distributed electron cyclotron resonance (DECR) microwave PECVD (10)(11)(12)(13). In this work we studied the effect of the gas mixture on the bulk physicochemical and electrical properties of SiO2 thin films.…”