Abstract:ChemInform Abstract Reductive deposition of P2W18O66-2 (P2W18) ions at pH 0 is shown to be an efficient and durable surface modification of n-and p-GaAs electrodes. The treatment induces surface states in the upper and in the lower part of the band gap of GaAs which are responsible for improved H2 evolution and better stability of the photoanodes. The chemical bonds between the substrate and the protonized P2W18 reduced species appear to be very strong.
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