ChemInform Abstract: Photoelectrochemical Properties of Semiconductor Diamond.

Pleskov, Yu. V.; Sakharova, A. Ya.; Krotova, M. D.; Bouilov, L.L.; Спицын, Б. В.

doi:10.1002/chin.198744006

Cited by 56 publications

(82 citation statements)

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“…Metallic diamond has been used for electrodes (5)(6), however, the physical properties have not been studied carefully, particularly at low temperatures. Therefore, the recent news of superconductivity at 2.3K in heavily boron-doped diamond synthesized by high-pressure high-temperature (HPHT) method was received with considerable surprise (7).…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in polycrystalline diamond thin films

Takano

Nagao

Takenouchi

et al. 2005

Diamond and Related Materials

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Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method.The superconducting transition temperatures are determined to be 8.7K for Tc onset and 5.0K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7T.2

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Section: Introductionmentioning

confidence: 99%

Superconductivity in polycrystalline diamond thin films

Takano

Nagao

Takenouchi

et al. 2005

Diamond and Related Materials

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“…Pleskov et al 9 have studied, for the rst time, the electrochemical and PEC behaviour of diamond electrodes. Tenne and Swain 10,11 have made cyclic voltammograms in the presence of redox couples.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical characterization on semiconductors p-type CVD diamond electrodes

Ferreira¹,

Silva²,

Corat³

et al. 1999

Braz. J. Phys.

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Semiconductor boron-doped CVD diamond lms were prepared on Si substrates by the hot lament technique. The surface morphology analysis by SEM presented continuous and well faceted lms.The samples were grown with di erent boron concentrations by controlling the B=C ratio in the feeding gas. Raman results showed a drastic change of diamond lms for di erent doping levels. The characteristic line at 1332 cm ,1 decreases and shifts to lower energy as a function of the lm resistivity. I t w as also observed a broad peak around 1220 cm ,1 caused by the incorporation of boron in the diamond lattice. Photocurrent-voltage behaviour of undoped and boron-doped diamond electrodes was investigated in dark and UV visible irradiation. The voltammograms showed that doped electrodes illuminated with a xenon lamp exhibited currents signi catively higher because of the increased conductivity. F or undoped electrodes it was observed a small photocurrent for anodic and cathodic polarization in the order of A for the potential range of +1.0 V and -1.0 V Ag=AgCl , for 1.0 M KCl. Mott-Schottky plots studied the interfacial processes at diamondelectrolyte junction. The atband potential Ufb was found between 0.6 and 0.8 V Ag=AgCl which v aries with the presence of sp 2 -type carbon as an impurity. F rom the curve slope the acceptor concentrations were found in the range of 10 18 and 10 21 cm ,3 . These values agree with the estimated concentration obtained by Raman measurements. I IntroductionThe evolution of research on semiconductor diamond has shown promising results with doping process during CVD growth. Due to its easy production and high stability, there is a great interest in studying the development of boron doped diamond leading to the application of these lms as electrode for, photoelectrochemical PEC cells, sensors, etc 1-3 .The standard methods used for CVD boron-doped diamond were initially thermal di usion 4,5 and ion implantation 6,7 . These processes were made ex situ", after the lm growth. The main advantage is the no-contamination of the growth reactor. Martin et al. 4 have obtained highly doped lms, using in situ" process from a solid source of boron inside of the reactor. Better results that evidenced more homogeneous lms were observed. CVD-grown polycrystalline diamond lms, depending on growth conditions, can have a wide spectrum of electrophysical properties. Their properties depend on the concentrations of defects in diamond grains, on the volume fraction of the nondiamond intergrain boundary phase, and on its nature. Okano et al 8 have proposed the boron doping during the CVD growth process using the hot lament reactor introducing B 2 O 3 dissolved in methanol-acetona mixture, that works as a carbon source for diamond growth. Their results showed lms with linear relation between the doping levels and boron concentration.Pleskov et al. 9 have studied, for the rst time, the electrochemical and PEC behaviour of diamond electrodes. Tenne and Swain 10,11 have made cyclic voltammograms in the presence of redox couples. Sa...

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“…Electrochemical studies of diamond started more than fifteen years ago, when the first paper on diamond electrochemistry was published 26 . After that, diamond synthesis was discovered through Chemical Vapour Deposition techniques at low pressures and excellent diamond growth rates were obtained [1][2][3][4] , thus demonstrating the good prospect for using diamond films in some industrial applications.…”

Section: Electrochemistry Of Diamondmentioning

confidence: 99%

Conductive diamond electrodes for water purification

Martínez‐Huitle

2007

Mat. Res.

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Nowadays, synthetic diamond has been studied for its application in wastewater treatment, electroanalysis, organic synthesis and sensor areas; however, its use in the water disinfection/purification is its most relevant application. The new electrochemistry applications of diamond electrodes open new perspectives for an easy, effective, and chemical free water treatment. This article highlights and summarizes the results of a selection of papers dealing with electrochemical disinfection using synthetic diamond films.

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ChemInform Abstract: Photoelectrochemical Properties of Semiconductor Diamond.

Cited by 56 publications

References 1 publication

Superconductivity in polycrystalline diamond thin films

Superconductivity in polycrystalline diamond thin films

Electrochemical characterization on semiconductors p-type CVD diamond electrodes

Conductive diamond electrodes for water purification

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