ChemInform Abstract: PREPARATION AND PROPERTIES OF SILICON DIOXIDE FILMS FROM SILANE‐CARBON DIOXIDE‐HYDROGEN

Ackermann

Lucarini

et al. 1977

Self Cite

Silicon oxynitride films false(SilOmNpfalse) have been deposited from SiH4‐CO2‐NH3‐H2 chemical system in a vertical, cold‐wall, multiple wafer, barrel‐type reactor. The kinetics of SiH4‐CO2 and SiH4‐NH3 reactions, both in H2 , have also been studied in the same reactor. All three reactions are first order with respect to SiH4 under conditions of “isolation technique.” Within the selected experimental range, the SiO2 deposition rate is independent of CO2 concentration, the Si3N4 deposition rate is independent of NH3 concentration, and the SilOmNp deposition rate is nearly independent of both CO2 and NH3 concentrations. The deposition rate of SiO2 , Si3N4 , and SilOmNp are not dependent on the H2 flow rate in the experimental range of 60–130 liters/min; thus all three reactions are chemical‐surface rate limited within the experimental range. The activation energies are 23.5, 24, and 29 kcal/g‐mole for SilOmNp , SiO2 , and Si3N4 , respectively. An anomalous effect of deposition temperature on silicon oxynitride refractive index (composition) was discovered and has been explained by the use of adsorption theory.

Section: Resultssupporting

confidence: 61%

Section: Methodsmentioning

confidence: 99%

Section: Theory and Calculationsmentioning

confidence: 99%

mentioning

confidence: 97%

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Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Ackermann

Lucarini

et al. 1977

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“…The details of the reactor used (10), the sample preparation, thickness measurement procedures, and typical deposition conditions have been described elsewhere (9). During this study, 1000-1500A films were used for the determination of most properties, except for stress measurements for which film thicknesses ranged between ~600-8000/k.…”

Section: Methodsmentioning

confidence: 99%

Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Hearn

1978

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The physicochemical properties of amorphous silicon oxynitride (SilOmND) films deposited from a SiH4-CO.2-NH~-H2 system have been investigated. The properties of CVD Si3N4 and SiO2 deposited from SiH4-NH3-H2 and SiH4-CO2-H2, respectively, were also investigated, wherever appropriate, to determine the end points of the SilO~No series. The film stress is a continuous, approximately parabolic function of silicon oxynitride composition. The SilOmN D composition also determines its resistance to oxidation in steam (950~ It is shown that a ,-~500k thick film with the composition of Si2ON2 is an adequate barrier to steam oxidation for 6 hr at 1000~ The etch rate of SilOmN, films is a function of composition in 7:1 BHF. In refluxing I4_~PO4, a peak in etch rate exists at a film composition of ~64% equivalent Si3N4. SilOmNo films deposited between 900 ~ and 1000~C densify 2-3% after "heat-treatment" at 1000~ for 2 hr and their etch rates decrease by ~50%; whereas the stress increases (more tensile) as a result of heat-treatment.Silicon oxynitride (SilOmNp) films have been chemical vapor deposited from various chemical systems (1-6), and the resulting properties have been reported(1-8). It was shown earlier by Gaind et al. (9) that the SiH4-CO2-NHs-H2 chemical system results in better process control, especially in forming Si3N4-rich oxynitride films; e.g., SilOmNp films with refractive index ~1.73 can be formed with NH3:CO2 ratio of ~6 at 900~C, whereas for other chemical systems, the NH3:oxidant ratio must be at least 50, usually ~5000 depending upon the oxidant (1-5).It is our purpose to show the similarity between the silicon oxynitrides produced by the above system and those reported in the literature. This is done by comparing physicochemical properties wherever possible with the existing data in the literature, we will at the same time be filling in gaps in the knowledge of physicochemical properties of silicon oxynitride, especially those which are important in the processing of devices (bipolar, I~'ET, etc.) which require wet etching, e.g., the oxidation barrier of oxynitrides to steam and the etch rate in refluxing phosphoric acid. There are no available data in the literature regarding these physicochemical properties.From a device-processing point of view, the importance of the effect of postdeposition "heat-treatment" (which simulates processes like diffusion or oxidation) on physicochemical properties of these dielectric films cannot be overemphasized. Thus we have investigated the effect of heat-treatment on SilOmNp film stress, etch rate, and changes in density (thickness). We have also investigated the effect of the deposition temperature on SitOmNp physicochemical properties by investigating these at two deposition temperatures, 900 ~ and 1000~ Experimental

Pseudostable MNOS Structures

Kasprzak

Hornung

1977

Thick oxide MNOS structures as studied by Frohman‐Bentchkowsky and Lenzlinger exhibit a flatband shift false(normalΔVnormalfbfalse) which saturates with time at bias. We have studied a MNOS structure (300Å of nitride and 300Å of oxide) with low conductivity nitride (10−8A cm−2 at 4×106V cm−1 , 373°K) which exhibits an increase in the rate of flatband voltage shift false(normalΔVnormalfbfalse) after an apparent saturation. This effect was observed on long time (2650 hr) bias‐temperature stress. Typical times to reach apparent saturation at 85°C varied from 200 to 1000 hr at 15 and 8.5V, respectively. At 165°C and 15V, the initial saturation almost merges with the subsequent rate increase of normalΔVnormalfb . Processing, characterization, and the bias temperature stress results for these structures are discussed. We propose that the stored charge is distributed throughout the Si3N4 rather than only at the SiO2‐Si3N4 interface.