ChemInform Abstract: Pulsed Laser Deposition of Ferrite Thin Films

Carosella, C.A.; Chrisey, D. B.

doi:10.1002/chin.199452288

Cited by 33 publications

(51 citation statements)

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“…Although thin film processes by sputtering and laser ablation are carried out in relatively high vacuum, generation of charged or neutral clusters as well as charged and neutral atoms is well established. [66][67][68] In these high vacuum processes, clusters are not formed in the gas phase, but are emitted from the target. In the thermal evaporation process, the base pressure is normally less than 10 26 torr, although the pressure increases to 10 23 -10 24 torr during the evaporation process.…”

Section: Effect Of Bias On Deposition Behaviourmentioning

confidence: 99%

“…In the case of sputtering 66,67 and laser ablation, 68 emission of neutral or charged clusters from the target is well established. If the reactor is in high vacuum with long mean free path, further collisions between clusters will not be appreciable and most neutral clusters remain In this sense, a moderate vacuum is beneficial to promote charging of the clusters, which is beneficial again in producing void-free films.…”

Section: Mechanism Of Cluster Charging In the Thin Film Processmentioning

confidence: 99%

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Charged clusters in thin film growth

Hwang¹,

Kim²

2004

International Materials Reviews

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A cauliflower structure is a granular film composed of spherical particles similar in size, each with numerous nanoscale nodules on its surface. The structure is produced during certain chemical vapour deposition (CVD) processes for diamond and silicon thin film growth. A classical account in terms of atomic unit deposition fails to explain the growth of such a cauliflower structure, as it requires a gas phase of much higher supersaturation than for onset of diffusion controlled growth. Another interesting and somewhat puzzling phenomenon encountered during a diamond CVD process is that while diamond is depositing on a graphite substrate, carbon atoms in the graphite itself are etched away into the vapour phase; that is, experience evaporation. Again, an elementary kinetic barrier mechanism fails to explain such CVD deposition of a less stable diamond phase combined with simultaneous evaporation of a stable graphite phase. In order to account for such puzzling CVD phenomena and others, a theory of charged clusters has been developed over the past decade as a new paradigm for thin film growth. The theory and its applications are reviewed in this work.

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Section: Effect Of Bias On Deposition Behaviourmentioning

confidence: 99%

Section: Mechanism Of Cluster Charging In the Thin Film Processmentioning

confidence: 99%

Charged clusters in thin film growth

Hwang¹,

Kim²

2004

International Materials Reviews

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“…The PLD technique is a non-equilibrium process 3 because the surface temperature of the target is ,10 5 K, electric field is ,10 5 V cm 21 and the energy of the ablated species is ,1-100 eV. In addition, the technique primarily involves quenching of matter from the vapor state.…”

Section: Non-equilibrium Processmentioning

confidence: 99%

“…Attempts have been made for a large area deposition of ,200 mm diameter by PLD. 3,13 The technique is fast emerging from a small scale research based laboratory technique to an important industrial technology. However, there are several challenges that have to be overcome before wide ranging industrial adoption of the technique.…”

Section: Challenges In Pldmentioning

confidence: 99%

“…The particulate material was initially removed from the plume using a mechanical velocity filter, although recently more elaborate techniques, involving collisions between two plasma plumes or off-axis deposition, have been used to successfully grow particulate free films. 3 A serious effort in computer simulation is needed to understand the fundamental physics and chemistry involved in the deposition process. However, a large amount of experimental data, obtained under accurately controlled and defined conditions, is required to assist the verification of such models.…”

Section: Challenges In Pldmentioning

confidence: 99%

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Status of pulsed laser deposition: Challenges and opportunities

Kuppusami

Raghunathan

2006

Surface Engineering

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Pulsed laser deposition (PLD) is a relatively new and unique method for producing multicomponent thin films. PLD films are used in diverse areas such as microelectronics, electro-optics, tribology and biomaterials. The success of this technique is due to its simplicity and the ease with which stoichiometric multicomponent films can be deposited. Among the physical vapour deposition (PVD) techniques, PLD is unique because of its ability to work in high pressures of reactive background gases.Though in 1965, Smith and Turner 1 reported the pulsed laser deposition of dielectric films using a ruby laser for the first time, the technique had a rebirth after the pioneering work of the team led by Venkatesan, 2 who demonstrated that high temperature superconducting thin films of YBa 2 Cu 3 O 7 could be deposited using this technique. Following this report, the technique received renewed interest which accelerated the development of PLD to it current status. The present name, pulsed laser ablation was designated by official voting from the participants of the first Material Research Society Symposium on 'Pulsed laser ablation' held in San Francisco, CA, USA in April 1989. 3 Some of the developments and issues concerned with the PLD are discussed below. P. Kuppusami (left) V. S. Raghunathan (right)

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Manipulation of ion energies in pulsed laser deposition to improve film growth

et al. 2019

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The growth and crystallinity of oxide thin films using a physical vapour deposition technique like molecular beam epitaxy (MBE) or pulsed laser deposition (PLD) is influenced by the flux of materials, the kinetic energy of species, and the substrate temperature. PLD is generating on a short time scale (µs) a large flux of materials, species with large kinetic energies (few eV up to several 10 eV), and requires often higher growth temperatures as compared to oxide MBE. Here, we show as a proof of principle that epitaxial TiO 2 thin films can be grown on LaAlO 3 (001) at a much-reduced deposition temperature of 300 °C by applying a bias voltage with respect to a grounded substrate. The controlled manipulation of ion energies with an applied electric field can allow to bridge the gap in growth conditions between PLD and oxide MBE.

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ChemInform Abstract: Pulsed Laser Deposition of Ferrite Thin Films

Cited by 33 publications

References 0 publications

Charged clusters in thin film growth

Charged clusters in thin film growth

Status of pulsed laser deposition: Challenges and opportunities

Manipulation of ion energies in pulsed laser deposition to improve film growth

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