Chemischer Informationsdienst
 1974
DOI: 10.1002/chin.197449008
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ChemInform Abstract: STRUKTURZUSTAND VON BOR IN STARK DOTIERTEN EPITAKTISCHEN ZUSAMMENSETZUNGEN MIT SILICIUM

M. A. Khatsernov1,
Anton A. Abramov2,
E. N. Lebedev3
et al.

Abstract: Ein Vergleich der Änderungen der Gitterparameter von Si beim Dotieren mit B mit der Trägerkonzentration zeigt, daß alles Bor, das sich in fester Substitutionslösung befindet, elektrisch aktiv ist.

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