1990
DOI: 10.1002/chin.199010022
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ChemInform Abstract: The Corrosion Behavior of Silicon Carbide in 290 °C Water

Abstract: is studied as a function of pH and concentration of dissolved oxygen.

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Cited by 14 publications
(30 citation statements)
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“…The grain boundaries with higher interfacial energy are likely to be more susceptible to oxidation mediated by water molecules. The resulting oxide layer was not stable but readily dissolved into water under hydrothermal conditions, as has been found in many studies [23][24][25][26][27][28]. Thus, the facilitated oxidation reaction with water at grain boundaries seems to lead to preferential corrosion at those grain boundaries.…”
Section: Resultsmentioning
confidence: 65%
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“…The grain boundaries with higher interfacial energy are likely to be more susceptible to oxidation mediated by water molecules. The resulting oxide layer was not stable but readily dissolved into water under hydrothermal conditions, as has been found in many studies [23][24][25][26][27][28]. Thus, the facilitated oxidation reaction with water at grain boundaries seems to lead to preferential corrosion at those grain boundaries.…”
Section: Resultsmentioning
confidence: 65%
“…Although the specimens have rather rough surfaces because we did not apply fine polishing for preparation of the test specimens, the surface microstructure was hardly changed after corrosion tests for up to 210 d. Compared with the microstructures in Fig. 2 and the previous corrosion test results [23,[25][26][27][28], the dissolution of SiC was extremely limited. Preferential corrosion at grain boundaries or pitting corrosion was hardly observed within the test duration in this study because of the extremely low corrosion rate after control of the dissolved hydrogen.…”
Section: Resultsmentioning
confidence: 94%
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“…Hirayama also reported the weight loss increased with increasing pH value, the weight loss in the oxygenated solution was more than that in the deoxygenated solution [26]. Verral reported that there was no significant interaction between SiC and Zircaloy-4 at 1273 K; at 1773 K there was a diffusionbased reaction to form ZrC and free SiC, but the SiC Zircaloy cladding interaction was no worse than the UO 2 -Zircaloy cladding interaction [25].…”
mentioning
confidence: 98%