Si-N-(0) fibres were grown according to a high temperature vapour-solid process involving the reaction between SiO and NH3 on a substrate. The oxygen concentration of the fibres is related to the partial pressures of SiO and NH 3 during fibre growth, depending respectively, on the processing temperature and the ammonia flow rate. The fibres consist of amorphous silicon oxynitride of composition Si0 2 xN4(1 :_xl; 3 (0.1 < x < 0.2). They exhibit a large spread in tensile strength. The lowest values (about 1 GPa) correspond to large surface defects caused by intergrowth while the highest values reach 5 G Pa for perfect fibres.The fibres are stable in nitrogen up to 1450°C (10h) in terms of composition, structure and mechanical behaviour owing to their high processing temperature (1450 °C) and the nitrogen pressure preventing decomposition. A superficial crystallization into Si3N4 is only observed at 1500 °C inducing a moderate decrease of strength. In argon, decomposition starts at 1400 °C yielding gaseous species (SiO and N2), crystalline ShN4 and free silicon beyond 1400 °C and induce a catastrophic drop of strength. Annealing in oxygen results in a growth of a protective Si02 scale, amorphous or partially crystalline at 1400 °C.