Chemisorption of CO on N-doped graphene on Ni(111)

Carraro, Giovanni; Celasco, Edvige; Smerieri, Marco; Savio, Letizia; Bracco, G.; Rocca, M.; Vattuone, L.

doi:10.1016/j.apsusc.2017.09.194

Cited by 19 publications

(21 citation statements)

References 42 publications

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“…Moreover, the presence of defects in the G lattice may also substantially alter the G–water interaction. We recall that depending on the adopted fabrication process, different defects can arise in the G lattice, which can imply higher chemical reactivity toward gaseous species. − Defects were also suggested as a relevant mechanism for achieving enhanced sensitivity to CO molecule adsorption, − although multiple heating cycles demanded for gas desorption and reuse may ultimately cause diminished sensitivity as a consequence of defect healing. For instance, we remark that the sensitivity of G to ammonia was shown to drastically decrease upon removal of contaminants introduced during nanolitography, so that the low δσ 0 is to be expected for NH 3 on pristine G. Adsorption of gas on G in the presence of chemisorbed epoxy-like O (observed in graphene oxide) was explicitly considered here as a comparison for pristine G (see the Supporting Information for data and discussion).…”

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confidence: 99%

Trends in the Change in Graphene Conductivity upon Gas Adsorption: The Relevance of Orbital Distortion

Ambrosetti

Silvestrelli

2020

J. Phys. Chem. Lett.

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The experimental ability to alter graphene (G) conductivity by adsorption of a single gas molecule is promoting the development of ultra-high-sensitivity gas detectors and could ultimately provide a novel playground for future nanoelectronics devices. At present, the underpinning effect is broadly attributed to a variation of G carrier concentration, caused by an adsorption-induced Fermi-level shift. By means of first-principle Kubo–Greenwood calculations, here we demonstrate that adsorbate-induced orbital distortion could also lead to small but finite G conductivity changes, even in the absence of Fermi-level shifts. This mechanism enables a sound physical interpretation of the observed variable sensitivity of G devices to different chemical moieties, and it can be strongly enhanced by using a suitable Ni substrate, thereby opening new pathways for the optimal design of operational nanoscale detectors.

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confidence: 99%

Trends in the Change in Graphene Conductivity upon Gas Adsorption: The Relevance of Orbital Distortion

Ambrosetti

Silvestrelli

2020

J. Phys. Chem. Lett.

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“…S2a†) and with doping of 1.6 wt% C 6 H 5 NO 2 (Fig. S2b†), 31–34 there are subpeaks at 399.7 eV, which may be caused by the N–O bond or the FeN x /NiN x chelate formed by the reaction of FeNi catalyst with nitrogen.…”

Section: Resultsmentioning

confidence: 99%

Study on the effect of N–H–O co-doping on diamond growth and its mechanism under HPHT by FeNi solvent

Cai

Chen

et al. 2022

CrystEngComm

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“…However, this procedure drastically reduces the quality of the Gr layer, due to the large defects induced by N bombardment. [24] An alternative approach, taking advantage of N segregation from the substrate in order to produce N-Gr, was proposed in the literature [25]. The authors engineered a system based on a SiO 2 /Si substrate, on which a boron layer, where a trace amount of nitrogen species was spontaneously incorporated, was firstly deposited by e-beam evaporation; a nickel (Ni) film was then deposited above it.…”

Section: Introductionmentioning

confidence: 99%