Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA

Hirose, Yutaka; Kahn, Antoine; Aristov, V. Yu.; Soukiassian, P.; Bulović, Vladimir; Forrest, Stephen R.

doi:10.1103/physrevb.54.13748

Cited by 318 publications

(255 citation statements)

References 27 publications

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“…Here, we should remark, that similar Al behavior during deposition onto 3,4,9,10-Perylenetetracarboxylic dianhydride matrix was reported in Ref. 28.…”

Section: -2supporting

confidence: 87%

Morphology and properties of a hybrid organic-inorganic system: Al nanoparticles embedded into CuPc thin film

Молодцова

Аристова

Babenkov

et al. 2014

Journal of Applied Physics

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The evolution of the morphology and the electronic structure of the hybrid organic-inorganic system composed of aluminum nanoparticles (NPs) distributed in an organic semiconductor matrix—copper phthalocyanine (CuPc)—as a function of nominal aluminum content was studied by transmission electron microscopy and by photoemission spectroscopy methods. The aluminum atoms deposited onto the CuPc surface diffuse into the organic matrix and self-assemble to NPs in a well-defined manner with a narrow diameter distribution, which depends on the amount of aluminum that is evaporated onto the CuPc film. We find clear evidence of a charge transfer from Al to CuPc and we have been able to determine the lattice sites where Al ions sit. The finally at high coverage about 64 Å the formation of metallic aluminum overlayer on CuPc thin film takes place.

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“…Here, we should remark, that similar Al behavior during deposition onto 3,4,9,10-Perylenetetracarboxylic dianhydride matrix was reported in Ref. 28.…”

Section: -2supporting

confidence: 87%

Morphology and properties of a hybrid organic-inorganic system: Al nanoparticles embedded into CuPc thin film

Молодцова

Аристова

Babenkov

et al. 2014

Journal of Applied Physics

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“…From the work functions energy barriers around 1 eV are expected for both In and Ga, although the injection properties could be more complicated due to possible chemical reactions at the interface. 12 Figure 4 demonstrates that also for In and Ga, the current of the IL PLED starts to deviate from the electron-only current ͑Yb͒ at high fields, pointing to an enhancement of the hole injection. However, the enhancement of the current for Ga and In shows a weaker dependence on the applied bias as compared to Ag.…”

Section: ͑3͒mentioning

confidence: 99%

Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

Woudenbergh

Blom

Huiberts

2003

Applied Physics Letters

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The electro-optical characteristics of a polymer light-emitting diode with a strongly reduced hole injection have been investigated. A silver contact on poly-dialkoxy-p-phenylene vinylene decreases the hole injection by five orders of magnitude, resulting in both a highly reduced light output and current. However, at high applied voltages, the current and light output strongly exceed the predictions based on the reduced hole injection, which is explained by an enhanced electric field near the hole-injection contact due to trapped electrons.

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“…In that approach, the WF change is monitored during metal deposition. 17,[22][23][24] The overall process requires precise film thickness control to deposit the metal monolayer by monolayer. Only a few organic materials have been examined using this method because of the rigorous requirements of the experimental set-up.…”

Section: Introductionmentioning

confidence: 99%

Dipole formation at organic/metal interfaces with pre-deposited and post-deposited metal

Zhong

Zhang

et al. 2017

NPG Asia Mater

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In organic electronic devices, the interfacial dipole at organic/metal interfaces is critical in determining the carrier injection or extraction that limits the performance of the device. A novel technique to enable the direct measurement of underburied dipoles is developed and demonstrated. By tilting the shadow mask by a small angle, metal atoms diffuse into the opening slit to form an ultrathin metal layer during the evaporation process. As the ultrathin metal layer cannot screen out the dipole-induced surface work function change, the dipole strength and direction at the organic/metal interface can be revealed. It was found that the polarity of the organic material, the Fermi-level pinning and the interface morphology all play important roles in dipole formation. By comparing the energy level shifts at the organic/pre-deposited metal and organic/post-deposited metal interfaces, the dipole formed by molecular interactions could be distinguished from the dipole formed by Fermi-level pinning. NPG Asia Materials (2017) 9, e379; doi:10.1038/am.2017.56; published online 19 May 2017 INTRODUCTIONIn organic electronic devices, such as organic solar cells and organic light-emitting diodes, energy-level alignment at the organic/metal interface is critical for device performance because it determines the carrier injection barrier and device built-in voltage. 1,2 A small energylevel offset between the organic material's charge transport level and the metal's Fermi level is always favored to form an ohmic contact at the interface. Therefore, metals with low work function (WF), such as Ba, Ca, Li, Cs and Al, are popular choices for cathodes to facilitate electron injection or extraction. 3-5 However, low WF metals are intrinsically unstable. As a consequence, much effort has been made to develop electrode modification materials to enable the use of stable but high WF metals as cathodes. 6 Both inorganic materials, such as alkali-metal salts and metal oxides, and organic materials, such as organic surfactants, have been successfully applied in devices. [7][8][9][10][11][12] Through the formation of a dipole layer at the organic/metal interface, induced by the interfacial interaction, the interfacial energy-level alignment is modified, leading to a reduction in the charge injection barrier. 1,13 Various molecular structures are being examined to find the best modification materials for different devices.To select the desired interfacial material, the most common characterization is measuring the WF change on substrates of the cathode metal before and after depositing the interfacial materials on top 14,15 (Figure 1a). A reduced WF indicates that the electron injection barrier is lowered and hence can be used at the cathode. In contrast, an increased WF implies that the material can be used to enhance hole injection at the anode. The deduction is straightforward for inverted devices for which the layer deposition sequence, that is, cathode

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Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA

Cited by 318 publications

References 27 publications

Morphology and properties of a hybrid organic-inorganic system: Al nanoparticles embedded into CuPc thin film

Morphology and properties of a hybrid organic-inorganic system: Al nanoparticles embedded into CuPc thin film

Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

Dipole formation at organic/metal interfaces with pre-deposited and post-deposited metal

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