Chemistry in Microelectronics 2013
DOI: 10.1002/9781118578070.ch2
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Chemistry in Interconnects

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“…ALD is a coating method that can meet these demands, although sputtered barrier layers remain dominant in the industry. 52 In Stokhof and coworkers' study, WN X C Y was deposited by ALD over two different dielectric layers: SiO x , deposited by plasma enhanced chemical vapor deposition (PECVD), and Aurora® 2.7, a proprietary low-k dielectric. The thickness of the WN X C Y layer was controlled by varying the number of ALD cycles.…”
Section: Application Of Leis To Semiconductors 39mentioning
confidence: 99%
“…ALD is a coating method that can meet these demands, although sputtered barrier layers remain dominant in the industry. 52 In Stokhof and coworkers' study, WN X C Y was deposited by ALD over two different dielectric layers: SiO x , deposited by plasma enhanced chemical vapor deposition (PECVD), and Aurora® 2.7, a proprietary low-k dielectric. The thickness of the WN X C Y layer was controlled by varying the number of ALD cycles.…”
Section: Application Of Leis To Semiconductors 39mentioning
confidence: 99%