Chip-scale reconfigurable phased-array sonic communication

Hoople, Jason; Kuo, Justin; Ardanuç, Serhan; Lal, Amit

doi:10.1109/ultsym.2014.0119

Cited by 9 publications

(5 citation statements)

References 8 publications

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“…Then with the understanding gained the whole stack will be designed and simulated. The objective is to maximize the signal level and bandwidth, while reducing the resonance peak from 2.7 GHz [1][2][3] to as close to 1 GHz as possible.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Previously we reported on a new methodology utilizing ultrasonic waves in silicon as a reconfigurable low power communication channel [1][2][3]. Our vision is a completely integrated system where piezoelectric transducers (such as aluminum nitride [AlN]) are integrated on the top of a CMOS stack.…”

Section: Introductionmentioning

confidence: 99%

“…Our vision is a completely integrated system where piezoelectric transducers (such as aluminum nitride [AlN]) are integrated on the top of a CMOS stack. With the initial successes [1][2][3] it became necessary to optimize the efficiency of the transducers.…”

Section: Introductionmentioning

confidence: 99%

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Optimized response of AlN stack for chipscale GHz ultrasonics

Hoople¹,

Kuo²,

Woon

et al. 2015

2015 IEEE International Ultrasonics Symposium (IUS)

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In this paper we present designs of an aluminum nitride (AlN) based transducer stack for ultrasonic transmit/receive applications integrated in silicon. By optimal design of the mechanical layer thickness and material properties, channel gain, center frequency and bandwidth can be controlled to allow for the use of lower gain and on-chip power electronics for integrated ultrasonic information processing. Certain materials in the stack were fixed due to the fabrication processing capability, however some of the passive layers, and the thicknesses of the layers could be controlled. Simulations were done to select the desired thicknesses of each layer and the resulting chip was fabricated and verified. Previous tape-outs from the fab had resulted in receive signal levels of 200 µV at 1.3 GHz, whereas the current stack had signal levels of 18 mV at 1.3 GHz.

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimized response of AlN stack for chipscale GHz ultrasonics

Hoople¹,

Kuo²,

Woon

et al. 2015

2015 IEEE International Ultrasonics Symposium (IUS)

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“…The center frequency for GHz transducers is set by the AlN and top dielectric thin film layer thicknesses, but several key functions are lithographically definable such as adjusting acoustic beam width through transducer sizing, adjusting echo amplitudes through transducer spacing, and adjusting diffraction characteristics through layout [14]. This flexibility allows GHz transducers to be used in a variety of configurations such as for GHz ultrasonic imaging [15], ultrasonic communication channels [16], temperature sensing [17], and clock oscillators [18]. By allowing users some choices in AlN and top dielectric layer thicknesses, more control over device operating frequencies can be realized.…”

Section: Introductionmentioning

confidence: 99%

Towards a Cmos Integrated Piezoelectric Mems Process Design Kit

Davaji,

Kuo,

Rinaldi

et al. 2022

2022 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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Piezoelectric AlScN/AlN thin films have enabled the integration of CMOS and MEMS with a wide variety of MEMS devices. Compared with the CMOS fabless design/foundry manufacturing model, where a PDK with multiple different devices is available for designers, there are very few shared MPW piezo-MEMS processes, and there are none that can support multiple different types of devices. A Piezo-MEMS PDK would enable CMOS designers to make systems from piezo-MEMS devices, not just MEMS experts. A Piezo-MEMS PDK that utilizes libraries of MEMS transducers and circuits is needed to fuel the development of piezoelectric MEMS systems to broader CMOS and sensors/actuators communities. In this work, we demonstrate the development of a process flow that supports both released resonators and bulk coupled GHz bulk ultrasonic transducers. We demonstrate functioning devices that consist of GHz BAW, FBAR, and CMR devices.

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“…Previous work from our group has demonstrated on-chip ultrasonic communications [1], ultrasonic delay line memory [2], and fingerprint sensing [3] (Fig. 1) using transit and receive links consisting of GHz ultrasonic pulses.…”

Section: Introductionmentioning

confidence: 99%

Diffraction Based Transmit-Receive Delay Element With Zero Temperature Coefficient

Abdelmejeed¹,

Kuo²,

Lal³

2016

2016 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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In this paper we present a pulse-echo transmit-receive ultrasonic delay element that is stable over time and has a novel diffraction based zero temperature coefficient of delay at two temperatures. The delay element is based on a CMOS compatible aluminum nitride (AlN) piezoelectric transducer requiring no release step, further improving reliability and reducing cost of production. The silicon bulk wave propagation leads to stable operation owing to low loss within silicon and large mode volume. The delay element achieves <6ppm stability and demonstrates zero temperature coefficient at 43 0 C and 72 0 C.

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Chip-scale reconfigurable phased-array sonic communication

Cited by 9 publications

References 8 publications

Optimized response of AlN stack for chipscale GHz ultrasonics

Optimized response of AlN stack for chipscale GHz ultrasonics

Towards a Cmos Integrated Piezoelectric Mems Process Design Kit

Diffraction Based Transmit-Receive Delay Element With Zero Temperature Coefficient

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