2019 International Wafer Level Packaging Conference (IWLPC) 2019
DOI: 10.23919/iwlpc.2019.8913877
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Chip to Wafer Hybrid Bonding with Cu Interconnect: High Volume Manufacturing Process Compatibility Study

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Cited by 25 publications
(11 citation statements)
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“…We propose the use of 1 large strides, 2 large kernel sizes, 3 reduced number of channels, 4 P 2 M custom convolution, and 5 shifted ReLU operation to incorporate the shift term of the batch normalization layer, for emulating accurate P 2 M circuit behaviour. dielectric-to-dielectric direct bonding hybrid process can achieve high-throughput sub-micron pitch scaling with precise vertical alignment 22 . One of the advantages of adapting this heterogeneous integration technology is that chips of different sizes can be fabricated at distinct foundry sources, technology nodes, and functions and then integrated together.…”
Section: Cis Process Integration and Area Considerationsmentioning
confidence: 99%
“…We propose the use of 1 large strides, 2 large kernel sizes, 3 reduced number of channels, 4 P 2 M custom convolution, and 5 shifted ReLU operation to incorporate the shift term of the batch normalization layer, for emulating accurate P 2 M circuit behaviour. dielectric-to-dielectric direct bonding hybrid process can achieve high-throughput sub-micron pitch scaling with precise vertical alignment 22 . One of the advantages of adapting this heterogeneous integration technology is that chips of different sizes can be fabricated at distinct foundry sources, technology nodes, and functions and then integrated together.…”
Section: Cis Process Integration and Area Considerationsmentioning
confidence: 99%
“…A convolutional stride of 6 with no pooling leads to a BR of 13.5×, also with a maximum of 64 weight transistors per pixel 2 . Note, using chip stacking in which weight transistors are integrated vertically on a stacked chip through metal-to-metal fusion bonding [10] or through-silicon-vias (TSVs) [21], minimal to no increase in pixel area is expected because of the dense metal-pitch (MP) and contacted poly-pitch (CPP) [11] of advanced technology nodes and the relatively large sizes of underlying pixel arrays.…”
Section: B Bandwidth Vs Number Of Transistorsmentioning
confidence: 99%
“…The Bi-CIS image sensor chip/die is heterogeneously integrated through a bonding process (die-to-die or die-to-wafer) integrating it onto the die consisting of weight transistors. Preferably, a die-to-wafer low-temperature metal-to-metal fusion with a dielectric-to-dielectric direct bonding hybrid process can achieve high-throughput sub-micron pitch scaling with precise vertical alignment 23 . One of the advantages of adapting this heterogeneous integration technology is that chips of different sizes can be fabricated at distinct foundry sources, technology nodes, and functions and then integrated together.…”
Section: Re-purposing Digital Correlated Double Sampling Circuit and ...mentioning
confidence: 99%