Chiral-induced switching of antiferromagnet spins in a confined nanowire

Abstract

In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on strong spin-orbit coupling, the charge-based and the torque-driven devices have fundamental limitations: Joule heating, phase mismatching and overshooting. In this work, we investigate numerically and theoretically alternative switching scenario of antiferromagnetic insulator in one-dimensional confined nanowire sandwiched with two electrodes. As the electric field could break inversion symmetry and induce Dzyaloshinskii-Moriya interaction and pseudo-dipole anisotropy, the resulting spiral texture takes symmetric or antisymmetric configuration due to additional coupling with the crystalline anisotropy. Therefore, by competing two spiral states, we show that the magnetization reversal of antiferromagnets is realized, which is valid in ferromagnetic counterpart. Our finding provides promising opportunities to realize the rapid and energyefficient electrical manipulation of magnetization for future spin-based electronic devices.

Optical-acoustic excitation of broadband terahertz antiferromagnetic spin waves

“…Based on the parameters and device dimension, we show that to generate a D a of 1 × 10 −3 eV, the electric-field strength and the applied voltage are at the magnitude of 10 7 V m −1 and V, respectively. This is close to the estimation about the DMI energy of an insulating AFM medium by Wang et al[51] and Kim et al[52].…”

Chiral-induced spin selectivity in biomolecules, hybrid organic–inorganic perovskites and inorganic materials: a comprehensive review on recent progress

“…213 At present, switches of magnetization based on Dzyaloshinskii–Moriya interaction have been reported. 214 The relationship between Dzyaloshinskii–Moriya interaction and spin filtering ability in chiral helical magnets remains to be further explored.…”

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

“…In recent years, the rise of exploration and engineering in advanced 2D vdW materials, such as MoS 2 , WSe 2 , and Fe 3 GeTe 2 (FGT), and 2D vdW antiferromagnets, etc., has provided a new materials platform for further study of spintronics [15][16][17][18][19][20][21][22][23][24][25][26][27]. FGT has high-quality surfaces, large coercivity, and perpendicular magnetic anisotropy (PMA) [28].…”