Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

Pedersen, Henrik; Kordina, Olof; Henry, Anne; Nishizawa, Shin Ichi; Koshka, Yaroslav; Janzén, Erik

doi:10.1021/cr200257z

Cited by 114 publications

(128 citation statements)

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“…The temperature and pressure used are based on common parameters in CVD processes of silicon carbide [6].…”

Section: Methodsmentioning

confidence: 99%

“…A further advantage with using chlorine as growth additive is that chlorinated silicon compounds are available in high purity since they are already commercially used in the silicon industry. The CVD process where chloride is added to the gas mixture is often called chloride-based CVD and it has been shown to be a route to achieve growth rates >100 µm/h at otherwise standard process conditions, but it has also opened up for low temperature (1300 °C) processes with growth rates around 5-10 µm/h [6].…”

Section: Introductionmentioning

confidence: 99%

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Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

et al. 2013

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Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations, 2013, Theoretical Chemistry accounts, (132) The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour deposition process for silicon carbide (SiC) epitaxial layers is studied by quantum-chemical calculations of the adsorption and diffusion of SiH 2 and SiCl 2 on the (000-1) 4H-SiC surface. SiH 2 was found to bind stronger to the surface than SiCl 2 by approximately 100 kJ mol -1 and to have a 50 kJ mol -1 lower energy barrier for diffusion on the fully hydrogen-terminated surface. On a bare SiC surface, without hydrogen termination, the SiCl 2 molecule has a somewhat lower energy barrier for diffusion. SiCl 2 is found to require a higher activation energy for desorption once chemisorbed, compared to the SiH 2 molecule. Gibbs free-energy calculations also indicate that the SiC surface may not be fully hydrogen terminated at CVD conditions since missing-neighbouring pair of surface hydrogens is found to be a likely type of defect on a hydrogen terminated SiC surface.

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“…The temperature and pressure used are based on common parameters in CVD processes of silicon carbide [6].…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

et al. 2013

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“…Active layer of SiC is commonly carried out homoepitaxially using chemical vapor deposition (CVD) technique 28,29 . Chemical vapor deposition (CVD) as its name suggests is a process where deposition occurs via chemical reactions from vapor phase precursors 30 .…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 99%

“…Typically, the process proceeds using precursors such as silane (SiH4) and light hydrocarbons such as ethylene (C2H4) or propane (C3H8). Alternatively, usage of precursors such as methyltrichlorosilane (CH3SiCl3) have also been reported 28,29 . During the process, the precursors are pre-diluted with a carrier gas (usually hydrogen) and fed into the heated growth chamber where the substrate is placed and well heated.…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 99%

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A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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Epitaxial Growth of Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

Cited by 114 publications

References 198 publications

Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Epitaxial Growth of Silicon Carbide

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