Chloride-Driven Chemical Vapor Transport Method for Crystal Growth of Transition Metal Dichalcogenides

Ubaldini, Alberto; Jaćimović, Jaćim; Ubrig, Nicolas; Giannini, E.

doi:10.1021/cg400953e

Cited by 75 publications

(57 citation statements)

References 48 publications

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“…The selection of the vapor transport agent is therefore a critical point that must be carefully taken into account for growing crystals of transition metal dichalcogenides. We have recently investigated the use of transition metal chlorides as effective transport agents for growing some of these compounds [13]. Similarly to MoSe 2 , TaX 2 crystals were grown using TaCl 5 .…”

Section: Methodsmentioning

confidence: 99%

Improved chemical vapor transport growth of transition metal dichalcogenides

Ubaldini

Giannini

2014

Journal of Crystal Growth

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In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of TiSe 2 , MoSe 2 , TaS 2 and TaSe 2 and found that pure I 2 is the most suitable for growing TiSe 2 , whereas transition metal chlorides perform best with Mo-and Ta-chalcogenides. The use of TaCl 5 as a transport agent in the CVT process allows to selectively growth either polymorph of TaS 2 and TaSe 2 and the optimum growth conditions are reported. Moreover, by using TaCl 5 and tuning the temperature and the halogen starting ratio, it was possible to grow whiskers of the compounds

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Section: Methodsmentioning

confidence: 99%

Improved chemical vapor transport growth of transition metal dichalcogenides

Ubaldini

Giannini

2014

Journal of Crystal Growth

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“…Synthetic high-quality bulk TMD crystals are commonly produced using the chemical vapor transport method 26 . After growth, individual layers held together by van der Waals forces can be separated from the bulk by mechanical exfoliation and transferred onto device substrates.…”

Section: Introductionmentioning

confidence: 99%

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS₂ by Pulsed Metal–Organic Chemical Vapor Deposition

et al. 2017

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High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metalorganic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)-bis(dimethylamido)molybdenum and diethyl disulfide we deposit MoS2 films from ≈ 1 nm to ≈ 25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO2/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metalorganic reagents in the controlled synthesis of TMDs.

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“…S.Y.Hu [7] utilized CVT process with Br 2 as a transporting agent grow large size MoSe 2 single crystals. The maximum size are about 10mm×10mm in surface area and 2mm in thickness.Alberto ubaldini [8] used four different transport agents:I 2 , NH 4 Cl, NH 4 Br and NH 4 I for preparing single crystals of MoSe 2 . A ratio between I 2 and Mo as high as 0.1 and 0.2 for other transport agents was used.…”

Section: Chemical Vapor Transport(cvt) Methodsmentioning

confidence: 99%

Survey of synthesis and application of Molybdenum Diselenide

Qi¹,

Liu²,

Zhao³

et al. 2015

Advances in Computer Science Research

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Abstract. The structure, properties and functions of molybdenum diselenide are described briefly.The present situation of the synthesis of molybdenum diselenide is surveyed on the basis of the introduction of chemical, restacking and physical methods. The application of molybdenum diselenide in solar cells, lubricating oil, field-effect transistor eta. is introduced in details. The advantages and disadvantages of various methods were evaluated, with the development tendency of preparation technique of nanoscaled molybdenum diselenide shown and it was emphasized that more attention should be paid on the combinations of preparation methods of nanocomposites. IntroductionTransition metal dichalcogenide（TMDs) are characterized by a MX 2 formula , where M stands for a transition metal(Mo, W) and X stands for a chalcogen (Se, S, or Te). [1][2] The layer type structure compounds transition metal dichalcogenides have been paid much attention in the last ten years because of their application in photo-voltaic、photoelectrocatalytic solar energy converters、 electrocatalyst、solid lubricants, etc. [3] Molybdenum diselenide (MoSe 2 ) is a member of transition metal dichalcogenides family. MoSe 2 not only has all the characteristics of transition metal dichalcogenides described above. while compared with other disulfide, MoSe 2 also has a back gate effect, solid lubrication properties etc. The superior performance of MoSe 2 draw much attention of researchers in these years.

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Chloride-Driven Chemical Vapor Transport Method for Crystal Growth of Transition Metal Dichalcogenides

Cited by 75 publications

References 48 publications

Improved chemical vapor transport growth of transition metal dichalcogenides

Improved chemical vapor transport growth of transition metal dichalcogenides

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS₂ by Pulsed Metal–Organic Chemical Vapor Deposition

Survey of synthesis and application of Molybdenum Diselenide

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Chloride-Driven Chemical Vapor Transport Method for Crystal Growth of Transition Metal Dichalcogenides

Cited by 75 publications

References 48 publications

Improved chemical vapor transport growth of transition metal dichalcogenides

Improved chemical vapor transport growth of transition metal dichalcogenides

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition

Survey of synthesis and application of Molybdenum Diselenide

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Product

Resources

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Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS₂ by Pulsed Metal–Organic Chemical Vapor Deposition