2022 IEEE 4th International Conference on Artificial Intelligence Circuits and Systems (AICAS) 2022
DOI: 10.1109/aicas54282.2022.9869993
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CIM-based Robust Logic Accelerator using 28 nm STT-MRAM Characterization Chip Tape-out

Abstract: Spin-torque transfer magnetic random access memory (STT-MRAM) based computation-in-memory (CIM) architectures have shown great prospects for energy-efficient computing. However, device variations and non-idealities narrow down the sensing margin that severely impacts the computing accuracy. In this work, we propose an adaptive referencing mechanism to improve the sensing margin of a CIM architecture for boolean binary logic (BBL) operations. We generate reference signals using multiple STT-MRAM devices and pla… Show more

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Cited by 10 publications
(9 citation statements)
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“…Solutions for mitigating the impact of non-idealities can be developed at various abstraction levels such as circuit-level [28], architecture-level [29] and application-level [5]. Next two solution examples will be illustrated.…”
Section: A Potential Solutionsmentioning
confidence: 99%
“…Solutions for mitigating the impact of non-idealities can be developed at various abstraction levels such as circuit-level [28], architecture-level [29] and application-level [5]. Next two solution examples will be illustrated.…”
Section: A Potential Solutionsmentioning
confidence: 99%
“…Resistive memories or memristive devices, such as ReRAM, PCM, and STT-MRAM [59,69,119,132], have recently been introduced as suitable candidates for both storage and computation units that can efficiently perform vector-matrix multiplication [138] and logical bulk bit-wise operations [26,73,113,114,139], as they can follow Kirchhoff's law inherently [121]. Therefore, many recent works [9,26,27,111,112,139,[143][144][145] exploit these devices in their CIM architectures.…”
Section: Memristor-based Cim and Associated Non-idealitiesmentioning
confidence: 99%
“…Therefore, many recent works [9,26,27,111,112,139,[143][144][145] exploit these devices in their CIM architectures. Memristor devices also enjoy non-volatility, highdensity, and near-zero standby power [73,119,139].…”
Section: Memristor-based Cim and Associated Non-idealitiesmentioning
confidence: 99%
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