Circuit design and experimental test of a high power IGBT non-destructive tester

Ahmed, Ashraf; Castellazzi, Alberto; Coulbeck, L.; Johnson, C.M.

doi:10.1016/j.microrel.2012.06.002

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…As a widely accepted SC test circuit, the non-destructive tester (NDT) is elementarily modified from the double-pulse-test (DPT) circuit [32]- [34]. In the NDT, devices may be slowly degraded but not destroyed during hundreds or even thousands of short-circuit cycles [35], [36]. In addition, because of the complex failure modes of SiC power MOSFETs, the method for evaluating SC robustness is discussed in this section.…”

Section: Non-destructive Testermentioning

confidence: 99%

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Cui

Xin

Liu

et al. 2022

IEEE J. Emerg. Sel. Topics Power Electron.

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To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-circuit (SC) robustness and reliability must be thoroughly evaluated. This paper, therefore, presents an overview of related research methods aiming to meet that objective. Topics reviewed include the non-destructive tester (NDT) used to implement SC faults, extraction and analysis of degradation parameters, and failure analysis of SiC MOSFETs. Concerning the NDT, its design criteria and methods for evaluating SC robustness are discussed. After which, key parameters used to assess SC reliability and methods for investigating degradation mechanisms are discussed and summarized. Finally, failure analysis techniques and their contributions to failure mechanisms are reviewed.

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Section: Non-destructive Testermentioning

confidence: 99%