Circuit Techniques using Substrate Bias for Design of Radiation Hardened Voltage Controlled Oscillator

Abstract

Rradiation effect causes some major impact on CMOS devices, such as the switch point, change output rail voltage, and the increased leakage current. If radiation is high, proper inverter operation fails. We suggest a scheme to maintain the output voltage by making V gs negative when the NMOS cuts off. This paper shows the structural CMOS with and without radiation and variation of electrical properties of device under various radiations doses and proposes a modified CMOS circuit which mitigates radiation effects by improving switch point in I-V characteristic. In order to redesign the circuit for radiation resistance; the above radiation hardened inverter circuit is implemented in each of Voltage Controlled Oscillator (VCO) gates using Radiation Hardened By Design (RDBD) technique.