CJFET Op-Amp without Current Mirrors for Low Temperature Applications

Prokopenko, N.; Chumakov, Vladislav; Bugakova, Anna V.; Denisenko, Darya

doi:10.1109/ewdts52692.2021.9581020

Cited by 3 publications

(3 citation statements)

References 20 publications

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“…The circuit of the precision OpAmp [8,9], which, with 100% negative feedback, can be used as a voltage follower when designing a Sallen-Key low-pass filter, is shown in Fig. 11.…”

Section: Circuit For Switching Of the Buffer Amplifier On Depletion-m...mentioning

confidence: 99%

“…The static output current of the current output error Out.i, which determines Voff, is equal to the difference Thus, with identical resistors and identical drain-gate characteristics of the applied field-effect transistors, the output error current for OpAmp (Fig. 11) [8,9] is equal to zero (Iout.i=0). As a consequence, based on equation (1), it can be found that the offset voltage's systematic component of the proposed OpAmp is also close to zero.…”

Section: Circuit For Switching Of the Buffer Amplifier On Depletion-m...mentioning

confidence: 99%

“…Open loop voltage gain OpAmp (Fig. 11) [8,9] is determined by the following equation GAIN = g • R (6) where Ri is the equivalent output resistance in the current output circuit Out.i, the numerical values of which are determined by the parallel connection of the resistance of the dynamic load DL, the output resistance of the field effect transistor M3 and the input resistance BA:…”

Section: Circuit For Switching Of the Buffer Amplifier On Depletion-m...mentioning

confidence: 99%

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Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component

Prokopenko¹,

Budyakov²,

Bugakova³

2022

Preprint

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The authors of the article performed computer simulation of buffer amplifiers (BA), which have medium and extremely small values of the offset voltage's systematic component (Voff), for different technological processes (Si, GaAs and GaN). The proposed control units are distinguished by a small number of elements and allow operation in the range of low and high temperatures. The variants of circuitry implementation of control units based on GaAs, GaN depletion-mode CMOS and JFET technological processes are considered. The results of the comparative modeling showed that the basic circuit of the BA on two field-effect transistors, when implemented on various modifications of GaN MOS and depletion-mode MOS transistors, provides sufficiently low values of the offset voltage's systematic component (less than 2 μV). The proposed BAs are designed for use in the structure of the Sallen-Key low-pass filter (LPF) when they are implemented both on mid-frequency Si CJFET and on GaAs microwave transistors. Low values of the LPF Voff have a positive effect on the effective capacity of the ADC. An example of switching on a BA in the JFET OpAmp structure based on the depletion-mode MOS input stage and a “folded” cascode, which, with 100% negative feedback, can be used in the Sallen-Key LPF, is considered. Computer simulation of the JFET/MOS OpAmp showed that the OpAmp has an open-loop voltage gain of 76-85dB, and its Voff is within 7µV in the temperature range from -60°C to +120°C. The presented circuitry of buffer amplifiers is intended, first of all, for the tasks of designing precision Sallen-Key low-pass filter (low-pass filter, high-pass filter, PF, RF).

show abstract

“…The circuit of the precision OpAmp [8,9], which, with 100% negative feedback, can be used as a voltage follower when designing a Sallen-Key low-pass filter, is shown in Fig. 11.…”

Section: Circuit For Switching Of the Buffer Amplifier On Depletion-m...mentioning

confidence: 99%

Section: Circuit For Switching Of the Buffer Amplifier On Depletion-m...mentioning

confidence: 99%

Section: Circuit For Switching Of the Buffer Amplifier On Depletion-m...mentioning

confidence: 99%

See 1 more Smart Citation

Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component

Prokopenko¹,

Budyakov²,

Bugakova³

2022

Preprint

View full text Add to dashboard Cite

show abstract

Op-Amps without current mirrors based on depletion-mode p- and n-channel MOS and JFET

Prokopenko

Budyakov²,

Bugakova

et al. 2022

Analog Integr Circ Sig Process

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Circuitry Approaches for Reducing of the Zero Level in Three-Stage CJFET Operational Amplifier

Prokopenko

Titov

Bugakova

et al. 2022

2022 IEEE International Conference on Design &Amp; Test of Integrated Micro &Amp; Nano-Systems (DTS)

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CJFET Op-Amp without Current Mirrors for Low Temperature Applications

Cited by 3 publications

References 20 publications

Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component

Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component

Op-Amps without current mirrors based on depletion-mode p- and n-channel MOS and JFET

Circuitry Approaches for Reducing of the Zero Level in Three-Stage CJFET Operational Amplifier

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