Cl
                  2
           plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy

Layadi, N.; Donnelly, Vincent M.; Lee, J. T. C.

doi:10.1063/1.365216

Cited by 82 publications

(51 citation statements)

References 22 publications

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“…The magnitude and direction of this shift are consistent with expectations for a Si-Cl species because Cl ͑of electronegativity p = 3.16͒ 41 is more electronegative than Si ͑ p = 1.90͒, 41 and electron density should thus be withdrawn from surface Si atoms to which Cl is bonded. Chlorine-terminated Si͑111͒ surfaces prepared using UHV techniques have been reported previously to display Si 2p binding energy XPS peak shifts of 0.7-0.9 eV, 3,17,[42][43][44][45] consistent with the observations described herein. The signal at +0.83 eV binding energy from the bulk Si 2p 3/2 peak represented an equivalent coverage of 0.98 ML.…”

Section: Resultssupporting

confidence: 80%

Chlorination of hydrogen-terminated silicon (111) surfaces

Rivillon

Chabal

Webb

et al. 2005

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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Infrared absorption spectroscopy was used to investigate the chlorination of hydrogen-terminated Si͑111͒ surfaces by three different methods: ͑a͒ exposure to a saturated solution of phosphorus pentachloride ͑PCl 5 ͒ in chlorobenzene; ͑b͒ exposure to chlorine gas, Cl 2 ͑g͒, and ͑c͒ exposure to Cl 2 ͑g͒ under UV illumination. X-ray photoelectron spectroscopy and first principles model ͑clusters͒ calculations were used to explore the structure and dynamics of these surfaces. The infrared spectra exhibited sharp chlorine-related vibrations at 586 and 527 cm −1 . The narrow full width at half maximum of these vibrations for all three preparation methods indicated that all functionalization schemes produced a nearly complete monolayer of Cl with little surface roughening or introduction of step edges. The 527 cm −1 mode was at a much higher frequency than might be expected for the bending vibration of Si monochloride. Theoretical calculations show, however, that this vibration involves the displacement of the top Si atom parallel to the surface, subject to a relatively stiff potential, shifting its frequency to a value fairly close to that of the Si-Cl stretching mode on a Si͑111͒ surface.

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Section: Resultssupporting

confidence: 80%

Chlorination of hydrogen-terminated silicon (111) surfaces

Rivillon

Chabal

Webb

et al. 2005

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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show abstract

“…17,18 SiCl 2 and SiCl 3 are on the plasma-treated surface and there might be steric interactions between neighboring SiCl x (xу2) that could interact locally in a way similar to the more global reconstruction on well-prepared surfaces. An increase in ion energy is known to increase the number of surface sites, 20 which is consistent with the observed increase in threshold chlorine fraction with increasing bias.…”

supporting

confidence: 72%

Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2–Ar plasmas with changing mixtures

Fuller

Telesca

Donnelly

et al. 2003

Applied Physics Letters

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The etch rate and surface SiCl and SiCl 2 concentrations abruptly increase and the surface Si concentration abruptly decreases as the chlorine fraction is increased above a threshold value during Si etching by an inductively coupled Cl 2 -Ar mixture plasma. The surface species are detected by laser desorption of the chlorinated adlayer using laser-induced fluorescence and plasma-induced emission of the desorbed species. This threshold chlorine fraction is 75% for 80 eV average ion energy, and increases with the average energy of ions incident on the surface. This unexpected observation is attributed to a phase transition between two states of surface chlorination and morphology.

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“…The takeoff angle, , is defined as the angle between the electron analyzer and the sample surface, and the maximum and minimum takeoff angle in this system is 85°and 30°, respectively. Since the escape depth of photoelectrons is constant (ϳ25 Å), 9 the effective sampling depth, dϭ sin , is a function of the takeoff angle. In other words, the sensitivity of surface spe-FIG.…”

Section: Methodsmentioning

confidence: 99%

Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine

Chang

Sawin

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The plasma-surface kinetics of silicon dioxide and photoresist etching in chlorine were measured by beam scattering in which the Ar+, Cl, and Cl2 beams were independently controlled at fluxes comparable to a high-density plasma etching process. The etching was characterized as a function of Ar+ ion energy, ion flux, chlorine-to-ion flux ratio, and the ion impingement angle. Molecular chlorine did not enhance the etching of silicon dioxide, but atomic chlorine enhanced the etching of oxide by a factor of 4 at flux ratios around 100. The ion energy dependence for oxide was a linear function of (Eion1/2−Eth1/2), where the threshold energy Eth was found to be approximately 40 eV. The oxide angular dependence showed a maximum etching yield at ∼60° off-normal ion incident angle, indicating that physical sputtering is the rate limiting mechanism. Angular resolved x-ray photoelectron spectroscopy analysis suggests that ion bombardment sputters oxygen and allows atomic chlorine to bond to silicon. The etching of chlorinated silicon is assumed to be enhanced by subsequent ion bombardment in a manner similar to ion enhanced polysilicon etching with chlorine. The angular dependence of photoresist etching exhibited a maximum at ∼60° off-normal ion incident angle, indicating that sputtering is the important etching mechanism.

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Cl 2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy

Cited by 82 publications

References 22 publications

Chlorination of hydrogen-terminated silicon (111) surfaces

Chlorination of hydrogen-terminated silicon (111) surfaces

Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2–Ar plasmas with changing mixtures

Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine

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