Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi0.52Sb1.48Te3

Kim, Kwanlae; Kim, Gwansik; Kim, Sang Il; Lee, Kyu Hyoung; Lee, Wooyoung

doi:10.1016/j.jallcom.2018.09.099

Cited by 40 publications

(26 citation statements)

References 24 publications

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“…Thus, the κ lat reduction by Hf-doping might be related both with mass fluctuation (by the atomic mass difference between Bi (M Bi = 208.98) and Hf (M Hf = 178.49)) and strain field fluctuation (by the atomic radius difference between Bi (230 pm) and Hf (225 pm). Despite the small mass and size difference between Bi and Hf, κ lat is reduced~25%, since high-frequency phonons are dominant in Bi-Te-based alloys [6]. A slightly increased κ lat value in Cu 0.01 Bi 1.875 Hf 0.125 Te 2.7 Se 0.3 is owing to the formation of the secondary phase (Hf 3 Te 2 ).…”

Section: Discussionmentioning

confidence: 98%

“…Recently, significantly enhanced zTs have been obtained via nanostructuring approaches [3][4][5]; however, a zT enhancement by a facile and straightforward compositional tuning is always favorable. For p-type Sb-substituted Bi 2 Te 3 alloys (Bi-Sb-Te), doping Ag, Cu, or Pb at Bi/Sb-sites has been effective to improve zT, especially at higher temperatures, mainly due to the suppression of bipolar thermal conduction [6][7][8]. Substitutional doping also provides a chance to enhance zT due to the enlarged density-of-states (DOS) by band engineering (e.g., band flattening, band convergence, and resonant state formation) [9][10][11][12] and/or intensified phonon scattering by the formation of point defects [13].…”

Section: Introductionmentioning

confidence: 99%

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Hf-Doping Effect on the Thermoelectric Transport Properties of n-Type Cu0.01Bi2Te2.7Se0.3

et al. 2020

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Polycrystalline bulks of Hf-doped Cu0.01Bi2Te2.7Se0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n-type Cu0.01Bi2Te2.7Se0.3, electronic and thermal transport parameters are estimated from the measured data. An enlarged density-of-states effective mass (from ~0.92 m0 to ~1.24 m0) is obtained due to the band modification, and the power factor is improved by Hf-doping benefitting from the increase in carrier concentration while retaining carrier mobility. Additionally, lattice thermal conductivity is reduced due to the intensified point defect phonon scattering that originated from the mass difference between Bi and Hf. Resultantly, a peak thermoelectric figure of merit zT of 0.83 is obtained at 320 K for Cu0.01Bi1.925Hf0.075Te2.7Se0.3, which is a ~12% enhancement compared to that of the pristine Cu0.01Bi2Te2.7Se0.3.

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Section: Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Hf-Doping Effect on the Thermoelectric Transport Properties of n-Type Cu0.01Bi2Te2.7Se0.3

et al. 2020

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“…1(b)) is widely performed for the fabrication of Bi 2 Te 3 -, PbTe-, and SnSe-based TE material ingots owing to their high homogeneities. 2,22,23) However, it is not suitable for the preparation of silicide-based TE materials owing to the high melting points of Si and Mn and the vaporization of Mg. Arc melting ( Fig. 1(c)) is the widely used method for fabricating alloys.…”

Section: Processing Technologies For Silicide Powdersmentioning

confidence: 99%

Fabrication of Silicide-based Thermoelectric Nanocomposites: A Review

Kim

Lee³

2019

J. Korean Ceram. Soc

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Thermoelectric is a promising technology that can convert temperature differences to electricity (or vice versa). However, their relatively low efficiencies limit their applications to thermoelectric power generation systems. Therefore, low cost and high performance are important prerequisites for the application of thermoelectric materials to automotive thermoelectric generators. Silicide-based thermoelectric materials are good candidates for such applications. Recently, the thermoelectric performances of silicide-based thermoelectric materials have been significantly improved. However, increasing the thermoelectric performance of the materials while ensuring mechanical reliability remains a challenge. This review summarizes the preparation and design guidelines for silicide-based thermoelectric nanocomposites, as well as our recent progress in the development of nanocomposites with high thermoelectric performances or high mechanical reliabilities.

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“…The former refers to the vacancies and antisite defects, while the latter refers to the guest atoms which is always introduced by doping or alloying as illustrated in Figure (b). The acceptor dopants include Pb, Mn, Ag, Cu and so on, and the halogens are the main donor dopants . The equivalent dopants, such as Se, Sb and S, are neutral, but they may affect the formation of intrinsic point defects thus the carrier concentration.…”

Section: Introductionmentioning

confidence: 99%

Tuning Optimum Temperature Range of Bi₂Te₃‐Based Thermoelectric Materials by Defect Engineering

Zhang

Fang

Liu

et al. 2020

Chemistry An Asian Journal

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Bi2Te3‐based solid solutions, which have been widely used as thermoelectric (TE) materials for the room temperature TE refrigeration, are also the potential candidates for the power generators with medium and low‐temperature heat sources. Therefore, depending on the applications, Bi2Te3‐based materials are expected to exhibit excellent TE properties in different temperature ranges. Manipulating the point defects in Bi2Te3‐based materials is an effective and important method to realize this purpose. In this review, we focus on how to optimize the TE properties of Bi2Te3‐based TE materials in different temperature ranges by defect engineering. Our calculation results of two‐band model revel that tuning the carrier concentration and band gap, which is easily realized by defects engineering, can obtain better TE properties at different temperatures. Then, the typical paradigms about optimizing the TE properties at different temperatures for n‐type and p‐type Bi2Te3‐based ZM ingots and polycrystals are discussed in the perspective of defects engineering. This review can provide the guidance to improve the TE properties of Bi2Te3‐based materials at different temperatures by defects engineering.

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Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi0.52Sb1.48Te3

Cited by 40 publications

References 24 publications

Hf-Doping Effect on the Thermoelectric Transport Properties of n-Type Cu0.01Bi2Te2.7Se0.3

Hf-Doping Effect on the Thermoelectric Transport Properties of n-Type Cu0.01Bi2Te2.7Se0.3

Fabrication of Silicide-based Thermoelectric Nanocomposites: A Review

Tuning Optimum Temperature Range of Bi₂Te₃‐Based Thermoelectric Materials by Defect Engineering

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Clarification of electronic and thermal transport properties of Pb-, Ag-, and Cu-doped p-type Bi0.52Sb1.48Te3

Cited by 40 publications

References 24 publications

Hf-Doping Effect on the Thermoelectric Transport Properties of n-Type Cu0.01Bi2Te2.7Se0.3

Hf-Doping Effect on the Thermoelectric Transport Properties of n-Type Cu0.01Bi2Te2.7Se0.3

Fabrication of Silicide-based Thermoelectric Nanocomposites: A Review

Tuning Optimum Temperature Range of Bi2Te3‐Based Thermoelectric Materials by Defect Engineering

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Tuning Optimum Temperature Range of Bi₂Te₃‐Based Thermoelectric Materials by Defect Engineering