Classical linear magnetoresistance in epitaxial graphene on SiC

Wang, W. J.; Gao, Kuang-Hong; Li, Z. Q.; Lin, Tianquan; Li, J.; Chen, Yu; Feng, Zhihong

doi:10.1063/1.4901175

Cited by 40 publications

(45 citation statements)

References 25 publications

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“…It is quadratic in the external magnetic field B at low fields, then saturates at high fields. Recently, with the discovery of the anomalous large MR effects in graphene, topological insulators, Dirac semimetals and some other materials [1][2][3][4][5][6], there has been increased interest in searching for more materials with a large MR effect due to its potential applications [7,8]. Several scenarios have been proposed to explain the large MR. For example, a linear MR has been suggested to be closely linked with the quantum limit induced by Dirac-like band dispersion, disorders in materials while disorders with high mobility or hole-electron compensation usually contribute to the large MR [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Bulk and surface electronic structure of hexagonal structuredPtBi2studied by angle-resolved photoemission spectroscopy

Yao

Yang

et al. 2016

Phys. Rev. B

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PtBi 2 with a layered trigonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high resolution angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through careful comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states, allowing the estimation of the real stoichiometry of samples. We find significant electron doping in PtBi 2 , implying a substantial Bi deficiency induced disorder therein. We discover a Dirac-cone-like surface state on the boundary of the Brillouin zone, which is identified as an accidental Dirac band without topological protection. Our findings exclude quantum-limit-induced linear band dispersion as the cause of the unconventional large linear magnetoresistance.

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Section: Introductionmentioning

confidence: 99%

Bulk and surface electronic structure of hexagonal structuredPtBi2studied by angle-resolved photoemission spectroscopy

Yao

Yang

et al. 2016

Phys. Rev. B

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“…This classical origin can be further verified by scaling the inverse Hall mobility with the crossover magnetic field (B * ) 7 . We define the B * , marked by the arrow, as the crossing point of linear fits at the low and high field regimes, which are shown as blue dashed lines in the in- .…”

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confidence: 99%

“…Even weak disorder could induce linear MR in highmobility samples 16,17 . When the carrier concentration a) Electronic mail: zhuan@zju.edu.cn is too high for the quantum limit, the linear MR may be described by classical model for disordered systems 7,18 .…”

mentioning

confidence: 99%

“…Owing to the rich physics and potential applications, the large linear MR effect has drawn renewed interest recently. [6][7][8] There are two predominant models used to explain the origin of such large linear MR effect, namely, the quantum model 9 and the classical model 10 . The quantum model is proposed for materials with zero band gap and linear energy dispersion, such as topological insulators 11 , graphene 12 , Dirac semimetals like SrMnBi 2 13 , and the parent compounds of iron based superconductors 14 .…”

mentioning

confidence: 99%

“…In contrast, the classical linear MR is dominated by disorder. Materials showing the classical linear MR include highly disordered systems 15 , and weakly disordered samples with high mobility 7,[16][17][18] , thin films, and quantum Hall systems 19 . However, it is interesting that the classical linear MR has also frequently been reported in materials with linear dispersions, such as the topological insulator Bi 2 Se 3 20 , graphene 7 , and the Dirac semimetal Cd 3 As 2 17 , which may be due to their large mobility.…”

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confidence: 99%

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Giant linear magneto-resistance in nonmagnetic PtBi2

Yang

Bai

Wang

et al. 2016

Applied Physics Letters

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We synthesized nonmagnetic PtBi 2 single crystals and observed a giant linear magneto-resistance (MR) up to 684% under a magnetic field µ 0 H = 15 T at T = 2 K. The linear MR decreases with increasing temperature, but it is still as large as 61% under µ 0 H of 15 T at room temperature. Such a giant linear MR is unlikely to be described by the quantum model as the quantum condition is not satisfied. Instead, we found that the slope of MR scales with the Hall mobility, and it can be well explained by a classical disorder model. PACS numbers: 75.47. Gk; 72.15.Gd; 71.20.Lp; 85.75.Bb Materials exhibiting large magneto-resistance (MR) can not only be utilized to enlarge the sensitivity of read/write heads of magnetic storage devices, e.g., magnetic memory 1 and hard drives 2 , but also stimulate many fundamental studies in material physics at low temperatures 3,4 . Generally speaking, the ordinary MR in non-magnetic compounds and elements 5 is a relatively weak effect and usually at the level of a few percent for metals 4 . Moreover, a conventional conductor under an applied magnetic field exhibits a quadratic field dependence of MR which saturates at medium fields and shows a relatively small magnitude. Owing to the rich physics and potential applications, the large linear MR effect has drawn renewed interest recently.6-8 There are two predominant models used to explain the origin of such large linear MR effect, namely, the quantum model 9 and the classical model 10 . The quantum model is proposed for materials with zero band gap and linear energy dispersion, such as topological insulators 11 , graphene 12 , Dirac semimetals like SrMnBi 2 13 , and the parent compounds of iron based superconductors 14 . Quantum linear MR occurs in the quantum limit when all of the electrons fill the lowest Landau level (LL)9 . In contrast, the classical linear MR is dominated by disorder. Materials showing the classical linear MR include highly disordered systems 15 , and weakly disordered samples with high mobility 7,16-18 , thin films, and quantum Hall systems 19 . However, it is interesting that the classical linear MR has also frequently been reported in materials with linear dispersions, such as the topological insulator Bi 2 Se 3 20 , graphene 7 , and the Dirac semimetal Cd 3 As 2 17 , which may be due to their large mobility. Even weak disorder could induce linear MR in highmobility samples 16,17 . When the carrier concentration a) Electronic mail: zhuan@zju.edu.cn is too high for the quantum limit, the linear MR may be described by classical model for disordered systems 7,18 .In this Letter, we synthesized high quality single crystals of nonmagnetic PtBi 2 and investigated the magnetotransport properties. We observed a giant positive linear MR up to 684% under µ 0 H = 15 T at T = 2 K. MR decreases with increasing temperature, but MR of 61% is still achieved under a magnetic field of 15 T even at room temperature. Regarding the origin of the linear MR, the close relationship between the MR and the Hall mobility implies that ...

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Room‐Temperature Colossal Magnetoresistance in Terraced Single‐Layer Graphene

et al. 2020

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Disorder‐induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in 2D materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single‐layer regime. Here, a room‐temperature colossal MR of up to 5000% at 9 T is reported in terraced single‐layer graphene. By laminating single‐layer graphene on a terraced substrate, such as TiO2‐terminated SrTiO3, a universal one order of magnitude enhancement in the MR compared to conventional single‐layer graphene devices is demonstrated. Strikingly, a colossal MR of >1000% is also achieved in the terraced graphene even at a high carrier density of ≈1012 cm−2. Systematic studies of the MR of single‐layer graphene on various oxide‐ and non‐oxide‐based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. The results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.

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Classical linear magnetoresistance in epitaxial graphene on SiC

Cited by 40 publications

References 25 publications

Bulk and surface electronic structure of hexagonal structuredPtBi2studied by angle-resolved photoemission spectroscopy

Bulk and surface electronic structure of hexagonal structuredPtBi2studied by angle-resolved photoemission spectroscopy

Giant linear magneto-resistance in nonmagnetic PtBi2

Room‐Temperature Colossal Magnetoresistance in Terraced Single‐Layer Graphene

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