Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

Arapkina, Larisa V.; Yuryev, Vladimir A.

doi:10.3367/ufne.0180.201003e.0289

Cited by 35 publications

(104 citation statements)

References 53 publications

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“…1,4,10,15,28 Our STM data demonstrate these two cluster forms to grow from different types of nuclei which have different structures and symmetries: 15,18 Fig. 1 presents STM images of these nuclei and models of arrangement of their atoms on WL.…”

Section: B Summary Of Main Resultsmentioning

confidence: 99%

“…Exploration of apex structure of bigger huts has shown that it is also different for pyramids and wedges. 4,15 Both nuclei reconstruct WL patch tops on which they appear (each on a single patch). Nuclei of pyramids transform to 3-D huts without any further reconstruction; a growing pyramid always reproduces a blossom-like shape of the nucleus on its vertex keeping its apex unchanged (Fig.…”

Section: B Summary Of Main Resultsmentioning

confidence: 99%

“…23 We have demonstrated that both pyramids and wedges grow in height conserving the width and the atomic structure of their apexes (the topmost (001) terraces). 4,6,17 This phenomenon also requires comprehension and adequate description: up to date, we have only hinted at such description in our recent articles. [15][16][17] An aim of this article is to propose physical processes on WL and cluster facets, and their structural schemes, on the basis of the previously performed STM studies, which could give adequate interpretation on atomic level to the experimentally observed evolution of each species of hut clusters during their growth setting the direction of thought for explanation of the presently incomprehensible phenomenon of simultaneous appearance of two types of hut nuclei on Ge/Si(001) WL which give rise to two mutually independent species of huts.…”

Section: Introductionmentioning

confidence: 99%

“…[15][16][17] An aim of this article is to propose physical processes on WL and cluster facets, and their structural schemes, on the basis of the previously performed STM studies, which could give adequate interpretation on atomic level to the experimentally observed evolution of each species of hut clusters during their growth setting the direction of thought for explanation of the presently incomprehensible phenomenon of simultaneous appearance of two types of hut nuclei on Ge/Si(001) WL which give rise to two mutually independent species of huts. 4,15 II. EXPERIMENTAL…”

Section: Introductionmentioning

confidence: 99%

“…Ge "hut" clusters or small self-assembled Ge/Si(001) clusters faceted by the {105} planes and coherent with the substrate lattice (pyramids with square bases and wedges with rectangular bases elongated in one of the <100> directions), [1][2][3][4] which form on the Ge wetting layer (WL) at low temperatures of Si substrates ( 600℃) in the process of ultrahigh-vacuum molecular-beam epitaxy (UHV MBE) or-probably with some peculiarities due to hydrogenation of WL-in the process of chemical vapor deposition, have attracted an interest of researchers for more than twenty years since their discovery by Mo et al in 1990 1 , because of both their potential practical importance for development of Si-based monolithic optoelectronic devices 5,6 and convenience and simplicity of their usage as model objects for investigation of the Stranski-Krastanow growth of heteroepitaxial structures.…”

Section: Introductionmentioning

confidence: 99%

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On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

Arapkina

Yuryev

2013

Journal of Applied Physics

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Structural models of growing Ge hut clusters-pyramids and wedges-are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc. monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of WL patches are relaxed when huts nucleate on them.

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Section: B Summary Of Main Resultsmentioning

confidence: 99%

Section: B Summary Of Main Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

Arapkina

Yuryev

2013

Journal of Applied Physics

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Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low‐temperature MBE‐grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations

Storozhevykh

Arapkina

Novikov

et al. 2022

J Raman Spectroscopy

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Ge/Si(001) multilayer heterostructures containing arrays of low‐temperature self‐assembled Ge quantum dots and very thin SixGe1−x layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy (STM). The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4 to 18 Å. The position and shape of both Ge and SiGe vibrational modes are of great interest because they are closely related to the strain and composition of the material that plays a role of active component in perspective optoelectronic devices based on such structures. In this work, we present an explanation for some peculiar features of Raman spectra, which makes it possible to control the quality of the grown heterostructures more effectively. A dramatic increase of intensity of both the Ge–Ge and Si–Ge bands for the structure containing Ge layers of 10 Å and anomalous shift and broadening of the Si–Ge band for structures comprising Ge layers of 8 and 9 Å thick were observed. In our model, the anomalous behavior of the Raman spectra with the change of thickness of deposited Ge is connected with the flatness of Ge layers as well as transitional SiGe domains formed via the stress‐induced diffusion from {105} facets of quantum dots. The conclusions are supported by the STM studies and the numerical calculations.

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