Nanoscale
 2024
DOI: 10.1039/d4nr02085e
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Clean SiO2 atomic layer etching based on physisorption of high boiling point perfluorocarbon

Dain Sung,
Hyunwoo Tak,
Heeju Kim
et al.

Abstract: This study aims to evaluate the SiO2 ALE selective to Si3N4 based on physisorption of high boiling point perfluorocarbons (HBP PFCs; C5F8, C7F14, C6F6, and C7F8 having boiling point above...

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