2009
DOI: 10.1149/1.3202672
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Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

Abstract: By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electrodes. This finding leads to a roll-to-roll-type deposition system of cleaning-free operation for film growth.

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