Clear correspondence between gated-diode R–G current and performance degradation of SOI n-MOSFETs after F–N stress tests

Abstract

A clear correspondence between the gated-diode generation-recombination (R–G) current and the performance degradation of an SOI n-channel MOS transistor after F–N stress tests has been demonstrated. Due to the increase of interface traps after F–N stress tests, the R–G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.