Abstract:We have developed a 10 GHz 32-bit delay-line memory, using a semiconductor crossbar switch and a YBa2Cu3O7- coplanar delay line. For use in the high-speed (10 GHz) cell-buffer storage of large-throughput (1 Tbit/s) asynchronous transfer mode (ATM) switching systems, this memory must be fairly reliable. To evaluate the reliability of the operation, therefore, we measured the clock-frequency and temperature margins and the temperature dependence of the bit-error rate. At 64 K, this memory has a capacity of 32 bi… Show more
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