Terbium (Tb) doped Ga2O3 films were grown on Si substrates by pulsed laser deposition at a substrate temperature of 500°C.The electroluminescence (EL) peaks detected at 488, 543, 587, and 622 nm from the Tb doped Ga2O3/Si light emitting diodes (LEDs) correspond to the 5D4 ‐ 7F6, 5D4 ‐ 7F5, 5D4 ‐ 7F4, and 5D4 ‐ 7F3 transitions, respectively. The EL intensity initially increases with current up to 70 mA, followed by a decrease at higher currents. Notably, there is no discernible shift in the EL spectra peaks as the operating current varies from 5 to 90 mA. These findings imply that the Tb doped Ga2O3/Si LED, characterized by its remarkable wavelength stability, holds significant potential for advancing the development of highly efficient LEDs across diverse applications.This article is protected by copyright. All rights reserved.