2022
DOI: 10.1038/s41598-022-06148-0
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Closing the yellow gap with Eu- and Tb-doped GaN: one luminescent host resulting in three colours

Abstract: Gallium nitride (GaN) is a key material when it comes to light-emitting diodes (LEDs) and has pushed the LED revolution in lighting and displays. The concept of down-conversion of a GaN-based blue LED offers the possibility to provide efficient generation of monochromatic, high-color purity light resulting in a highly efficient warm-white all-nitride phosphor-converted light emitting diode (pc-LED). Although the down conversion of blue light from InGaN LEDs has become a dominant technique for producing white l… Show more

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Cited by 12 publications
(8 citation statements)
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“…This effect could be proven in the meantime for other doped nitrides 31 e.g. , GaN 31,32 (see Fig. 2e), and carbodiimides as well.…”
Section: Resultsmentioning
confidence: 72%
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“…This effect could be proven in the meantime for other doped nitrides 31 e.g. , GaN 31,32 (see Fig. 2e), and carbodiimides as well.…”
Section: Resultsmentioning
confidence: 72%
“…Silicon nitride (Si 3 N 4 ) materials have been found to meet these requirements due to its rigid lattices with highly covalent network and high thermal stability. 31,32 However, looking at the literature indicates that there are only a few investigations concerning rare-earth doped silicon nitride materials. In most cases only Eu- and Tb-doped α-Si 3 N 4 thin films and nanowires illustrating broad band emission are concerned.…”
Section: Mainmentioning
confidence: 99%
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