Cluster-ion emission from semiconductive chemical compounds under MeV-energy heavy ion bombardment

Ninomiya, Satoshi; Gomi, S.; Imada, Chikage; Nagai, Masafumi; Imai, Makoto; Imanishi, N.

doi:10.1016/s0168-583x(02)02044-x

Cited by 4 publications

(4 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2, the yields of In + , which is the dominant species emitted from the In-V semiconductive chemical compounds, depend scantly on the incident energy between 0.5 and 5.0 MeV, but the yields of the group-V atomic ions, which are minor components, increase with increasing projectile energy. The observed results are very similar to the case of GaP, GaAs, and GaSb [8]. The ionization potentials of the group-V atoms are much higher than those of the group-III atoms, as shown in Table I [16], and the different projectile-energy dependence of the yields of the group-III and -V atomic ions can be explained based on the surface ionization of the sputtered particles.…”

Section: B Singly Charged Secondary Atomic Ionssupporting

confidence: 75%

“…The cluster ions produced from the In-V targets consist of only indium atoms or those attaching a few group-V atoms. For comparison, in the case of Ga-V semiconductive materials, in spite of intense Ga + ions emitted, cluster ions composed of only antimony atoms or those attaching a few Ga atoms are substantially emitted from GaSb, but cluster ions are hardly produced from GaP and GaAs [7][8][9][10].…”

Section: Resultsmentioning

confidence: 99%

“…It has been a great concern since the discovery of emission of large ionized molecules by Torgerson, Skowronski, and Macfarlane how the energy deposited to excitation of an electronic system transfers to kinetic energies enough to sputter large molecules [1]. So far, most experimental works were done for weakly bound materials such as condensed gases and biomolecules [2,3] and only a few works were done for tightly bound chemical compounds [4][5][6][7][8][9][10] except for alkali halides [11]. In contrast to nuclear-collision-induced sputtering at low incident energies, the emission mechanism of large molecules is very complex.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the aim of the present study is to reveal in detail the material dependence of the mechanism. We have measured yields and energy distributions of secondary ions emitted from In (group-V) semiconductive compounds at incident energies between 0.5 and 5 MeV, where the electronic collision process far dominates over the nuclear one, and have compared them with those of SiO 2 (insulator), Si (semiconductor), and Ga (group-V) semiconductive compounds [4][5][6][7][8][9][10]. Systematical dependences on the electric properties of the materials have been obtained for the emission of singly and multiply charged atomic ions and cluster ions.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

et al. 2004

Self Cite

View full text Add to dashboard Cite

Secondary-ion emission from III-V semiconductive chemical compounds (InP, InAs, and InSb) has been experimentally studied at heavy-ion energies from 0.5 to 5.0 MeV, where electronic collision is a dominant process. Various secondary ions such as large cluster ions and atomic ions were observed. Yields of In atomic and cluster ions depend scantly on the incident energy, and those of group-V atomic ions and of cluster ions containing group-V elements can be expressed by an exponential function of S e −1 , where S e is the electronic stopping power. This fact shows that the ionization probabilities of the atoms and the clusters whose ionization potentials are higher than the work functions of target materials are increased by transient electronic excitation induced by ion bombardment. The energy distributions of the atomic ions show that the singly charged atomic ions are emitted through the linear collision cascade process even at MeV incident energies, and the multiply charged ions are produced by a projectile-induced simultaneous process of ionization and recoiling of atoms on the target surface. The yield dependences of the cluster ions on the electronic stopping power and on the cluster size are so much different from those for SiO 2. This fact precludes the multiple-bond-breaking process applied to the insulating material. Structural instabilities caused by high-density electronic excitations, which are known to take place in GaAs irradiated by slow multiply charged ions or lasers, are a possible cause of the cluster-ion emission from the semiconductive compounds at the MeV energy range.

show abstract

Section: B Singly Charged Secondary Atomic Ionssupporting

confidence: 75%