2019
DOI: 10.1134/s1063778819110115
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Cluster Model of the Mechanism of Sensitivity of Gas Sensors Based on MIS Structures

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Cited by 5 publications
(5 citation statements)
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“…Some hydrogen atoms penetrate the boundary with the dielectric either directly through the pores in the Pd film or by tunnel mechanism through Pd grains (clusters). [ 146 ] Penetrated hydrogen atoms form a polarized dipole layer of H in the interface Pd–dielectric. The equilibrium between the hydrogen concentration at the Pd surface and the hydrogen concentration at the Pd–insulator interface reaches in a few seconds.…”
Section: The Catalytic Action In Hydrogen Sensingmentioning
confidence: 99%
“…Some hydrogen atoms penetrate the boundary with the dielectric either directly through the pores in the Pd film or by tunnel mechanism through Pd grains (clusters). [ 146 ] Penetrated hydrogen atoms form a polarized dipole layer of H in the interface Pd–dielectric. The equilibrium between the hydrogen concentration at the Pd surface and the hydrogen concentration at the Pd–insulator interface reaches in a few seconds.…”
Section: The Catalytic Action In Hydrogen Sensingmentioning
confidence: 99%
“…To solve the problem of increasing the sensitivity of the MIS sensor, a new type of MIS structure, Pd-SnO 2 -SiO 2 -Si, was fabricated and studied, characterized in that the dielectric layer of SnO 2 was additionally sprayed onto the SiO 2 film by the magnetron sputtering of tin in the presence of oxygen. This method allows the formation of a dielectric film with a highly effective surface area, which, according to [34], can contribute to a significant increase in sensitivity. The experimental results obtained on the electronic circuit for measuring the sensor's signal using capacitance-to-digital converter [38] confirm this (Figure 11).…”
Section: Investigation Of the Possibility Of Increasing The Sensitivimentioning
confidence: 99%
“…The principle of operation of gas capacitive MIS sensors [34] is as follows. Molecules of gases from the atmosphere are adsorbed on the surface of the metal (palladium) electrode and diffuse through the porous film of Pd-gate to the metal-insulator (MI) interface.…”
Section: Introductionmentioning
confidence: 99%
“…2b) up to 10 nm thick, gas molecules are adsorbed on traps with a surface density of the order of 10 11 cm -2 , which leads to a change in the sensor capacitance (pF) due to the shift of its capacitance-voltage characteristic. [26][27][28] An example of the MIS sensor capacitancevoltage characteristic shift under the various hydrogen concentrations action in the air is shown in the Fig. 4.…”
mentioning
confidence: 99%
“…Therefore, molecules of even polyatomic gases can freely pass through numerous pores between nano crystallites up to the Pd-Ta 2 O 5 interface. In the Pd x (Ta 2 O 5 ) y transition layer (Fig.2b) up to 10 nm thick, gas molecules are adsorbed on traps with a surface density of the order of 10 11 cm -2 , which leads to a change in the sensor capacitance (pF) due to the shift of its capacitance-voltage characteristic [26][27][28]. An example of the MIS sensor capacitancevoltage characteristic shift under the various hydrogen concentrations action in the air is shown in the Fig.4.…”
mentioning
confidence: 99%