2011
DOI: 10.1016/j.cplett.2010.12.038
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Clustering effects in plasma-assisted chemical fluid deposition of copper: Similarities between deposition rate and density fluctuation

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Cited by 4 publications
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“…In another study, plasma-assisted chemical fluid deposition in scCO 2 was used to deposit copper films on Si substrates [132]. It was found that the film deposition rate at the centre of the deposition reached its highest value for conditions near the pressure that corresponded to the density fluctuation maximum, which indicated the effect of clustering on the film deposition.…”
Section: Applicationsmentioning
confidence: 99%
“…In another study, plasma-assisted chemical fluid deposition in scCO 2 was used to deposit copper films on Si substrates [132]. It was found that the film deposition rate at the centre of the deposition reached its highest value for conditions near the pressure that corresponded to the density fluctuation maximum, which indicated the effect of clustering on the film deposition.…”
Section: Applicationsmentioning
confidence: 99%