2007
DOI: 10.1049/el:20070784
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CMOS 2D Hall microsensor with minimal design complexity

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Cited by 9 publications
(7 citation statements)
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“…If the parallel-field Hall device is deep enough, by using four separate sensing contacts only, H 1 -H 2 and H 3 -H 4 , located at the top side of the silicon chip, where one of the terminal pairs is located in the zone of the inside supply contacts [6,9,16], and the other terminal pair is located in the zone outside the supply electrodes [6,9,13], it is possible to achieve maximum sensitivity [15]. So far, in parallel-field Hall microsensors, the Hall voltage has been measured experimentally by two contacts, H 1 and H 2 , and in the elements with minimal design complexity -by one contact H [6,9,11,12,16].…”
Section: Concept Of the Novel Two-axis Hall Devicementioning
confidence: 99%
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“…If the parallel-field Hall device is deep enough, by using four separate sensing contacts only, H 1 -H 2 and H 3 -H 4 , located at the top side of the silicon chip, where one of the terminal pairs is located in the zone of the inside supply contacts [6,9,16], and the other terminal pair is located in the zone outside the supply electrodes [6,9,13], it is possible to achieve maximum sensitivity [15]. So far, in parallel-field Hall microsensors, the Hall voltage has been measured experimentally by two contacts, H 1 and H 2 , and in the elements with minimal design complexity -by one contact H [6,9,11,12,16].…”
Section: Concept Of the Novel Two-axis Hall Devicementioning
confidence: 99%
“…The innovative task in this research is to design a two-axis Hall magnetometer, which combines the simultaneous measurement of the in-plane magnetic-field components B x and B y and the advantages of the 2D microsensor from [11,14] to reduce sufficiently the 1/f noise level.…”
Section: Concept Of the Novel Two-axis Hall Devicementioning
confidence: 99%
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